| No. |
Part Name |
Description |
Manufacturer |
| 361 |
HERF1604G |
Rectifier: High Efficient |
Taiwan Semiconductor |
| 362 |
HFBR-1604 |
HFBR-1604 · 2 MBd SERCOS Fiber Optic Transmitter - with power specified to meet SERCOS high attenuation specs |
Agilent (Hewlett-Packard) |
| 363 |
HFBR-1604 |
HFBR-1604 · 2 MBd SERCOS Fiber Optic Transmitter - with power specified to meet SERCOS high attenuation specs |
Agilent (Hewlett-Packard) |
| 364 |
IDT5962-9221604M2A |
8 Input Universal Shift Register |
IDT |
| 365 |
IDT5962-9221604MRA |
8 Input Universal Shift Register |
IDT |
| 366 |
IDT71P71604 |
1.8V 512K x 36 DDR II Pipelined SRAM |
IDT |
| 367 |
IHER1604C |
Recovery Rectifier |
Rectron Semiconductor |
| 368 |
IRL1604C |
Standard Rectifier |
Rectron Semiconductor |
| 369 |
IS1604 |
OPIC Light Detector for 4 times Speed CD-ROM Drive |
SHARP |
| 370 |
JAN38510/11604BCC |
JAN Certification Mark - Part Number System - Analog Switch |
Siliconix |
| 371 |
K4E160411D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 372 |
K4E160411D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 373 |
K4E160411D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 374 |
K4E160412D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 375 |
K4E160412D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 376 |
K4E160412D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 377 |
K4F160411C-B50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 378 |
K4F160411C-B60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 379 |
K4F160411C-F50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 380 |
K4F160411C-F60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 381 |
K4F160411D |
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 382 |
K4F160411D-B |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 383 |
K4F160411D-F |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 384 |
K4F160412C-B50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 385 |
K4F160412C-B60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 386 |
K4F160412C-F50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 387 |
K4F160412C-F60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 388 |
K4F160412D |
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 389 |
K4F160412D-B |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 390 |
K4F160412D-F |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
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