| No. |
Part Name |
Description |
Manufacturer |
| 361 |
ERX5SJ1R8H |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 362 |
ERX5SJ1R8P |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 363 |
ERX5SJS1R8H |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 364 |
FSLM2520-1R8-J |
Wirewound Chip Inductors |
TOKO |
| 365 |
FSLM2520-1R8-K |
Wirewound Chip Inductors |
TOKO |
| 366 |
GH2801R8S |
50W Total Output Power 28 Vin +1.8 Vout Single DC-DC Radiation Hardened Converter in a GH Package. |
International Rectifier |
| 367 |
HM53-001R8H |
High Power Low Cost Inductors |
BI Technologies |
| 368 |
HM53-001R8V |
High Power Low Cost Inductors |
BI Technologies |
| 369 |
LNJ211R82RA |
Opto Electronic Devices |
Panasonic |
| 370 |
LNJ211R8ARA |
Opto-Electronic Device - Visible Light Emitting Diodes - Chip LEDs |
Panasonic |
| 371 |
LNJ211R8ARU |
Opto-Electronic Device - Visible Light Emitting Diodes - Chip LEDs |
Panasonic |
| 372 |
LNJ811R88RA |
Opto Electronic Devices |
Panasonic |
| 373 |
LNJ811R8DRA |
Opto Electronic Devices |
Panasonic |
| 374 |
LNJ811R8DRU |
Opto Electronic Devices |
Panasonic |
| 375 |
LSO2801R8S |
30W Total Output Power 28 Vin +1.8 Vout Single DC-DC Radiation Hardened Converter in a LSO Package. |
International Rectifier |
| 376 |
PAH200H48-1R8 |
High current High Efficieny Single Output 200W |
DENSEI-LAMBDA |
| 377 |
PAQ100S48-1R8 |
Single output DC-DC power module for TELECOM |
DENSEI-LAMBDA |
| 378 |
PAQ50S48-1R8 |
Single output DC-DC power module for TELECOM |
DENSEI-LAMBDA |
| 379 |
PG10A-48-1R8 |
SMD type Single output DC-DC power module |
DENSEI-LAMBDA |
| 380 |
PSMN1R8-30BL |
N-channel 30 V, 1.8 mΩ logic level MOSFET in D2PAK |
Nexperia |
| 381 |
PSMN1R8-30BL |
N-channel 30 V, 1.8 mΩ logic level MOSFET in D2PAK |
NXP Semiconductors |
| 382 |
PSMN1R8-30PL |
N-channel 30 V, 1.8 mΩ logic level MOSFET in TO-220 |
Nexperia |
| 383 |
PSMN1R8-30PL |
N-channel 30 V, 1.8 mΩ logic level MOSFET in TO-220 |
NXP Semiconductors |
| 384 |
PSMN1R8-40YLC |
N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technology |
Nexperia |
| 385 |
PSMN1R8-40YLC |
N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technology |
NXP Semiconductors |
| 386 |
S1R80 |
Silicon rectifier diode |
Shindengen |
| 387 |
SBB501R8S |
30W Total Output Power 5 Vin +1.8 Vout Single DC-DC Radiation Hardened Converter in a SBB Package. |
International Rectifier |
| 388 |
SMI-43-1R8 |
SMD POWER INDUCTORS |
Micro Electronics |
| 389 |
STM320518-SK/IAR |
IAR starter kit for STM32 F0 series microcontrollers (STM32F051R8 MCU) |
ST Microelectronics |
| 390 |
STM32F051R8 |
Entry-level ARM Cortex-M0 MCU with 64 Kbytes Flash, 48 MHz CPU, motor control and CEC functions |
ST Microelectronics |
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