| No. |
Part Name |
Description |
Manufacturer |
| 361 |
2N3525 |
Reverse Blocking Triode Thiristor (SCR) |
Transitron Electronic |
| 362 |
2N3625 |
Silicon NPN Transistor |
Motorola |
| 363 |
2N3725 |
1.000W Switching NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 60 - 150 hFE. |
Continental Device India Limited |
| 364 |
2N3725 |
NPN small signal high current high speed switch. |
Fairchild Semiconductor |
| 365 |
2N3725 |
NPN Switching transistor |
FERRANTI |
| 366 |
2N3725 |
High speed NPN silicon planar epitaxial High-Voltage, High-Current Transistor |
ITT Semiconductors |
| 367 |
2N3725 |
Silicon NPN Transistor |
Motorola |
| 368 |
2N3725 |
Trans GP BJT NPN 50V 1.2A 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 369 |
2N3725 |
HIGH VOLTAGE, HIGH CURRENT SWITCH |
SGS Thomson Microelectronics |
| 370 |
2N3725 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
| 371 |
2N3725 |
HIGH VOLTAGE/ HIGH CURRENT SWITCH |
ST Microelectronics |
| 372 |
2N3725 |
Silicon Planar High Current core drivers - PNP Transistor |
Transitron Electronic |
| 373 |
2N3825 |
Silicon NPN Transistor |
Motorola |
| 374 |
2N3925 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
| 375 |
2N3925 |
Silicon NPN Transistor |
Motorola |
| 376 |
2N4025 |
Silicon PNP Transistor |
Motorola |
| 377 |
2N4025 |
Transistor silicon differential amplifiers |
SGS-ATES |
| 378 |
2N4125 |
General Purpose PNP Transistor |
CCSIT-CE |
| 379 |
2N4125 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 380 |
2N4125 |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 381 |
2N4125 |
Low Noise PNP Transistor |
FERRANTI |
| 382 |
2N4125 |
Switching PNP transistor |
FERRANTI |
| 383 |
2N4125 |
General purpose PNP transistor |
FERRANTI |
| 384 |
2N4125 |
Planar epitaxial passivated PNP silicon transistor. -30V, 200mA. |
General Electric Solid State |
| 385 |
2N4125 |
General Purpose NPN silicon switching and amplifier transistor |
ITT Semiconductors |
| 386 |
2N4125 |
PNP silicon transistor |
Motorola |
| 387 |
2N4125 |
Silicon PNP Transistor |
Motorola |
| 388 |
2N4125 |
PNP Silicon Transistor |
NEC |
| 389 |
2N4125 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 390 |
2N4125 |
Amplifier transistor. Collector-emitter voltage: Vceo = -30V. Collector-base voltage: Vcbo = -30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
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