| No. |
Part Name |
Description |
Manufacturer |
| 361 |
PGR20302 |
PIN Receiver Module up to 3 Gb/s |
Ericsson Microelectronics |
| 362 |
PGR20312 |
APD Receiver Module up to 3 Gb/s |
Ericsson Microelectronics |
| 363 |
PH1113-100 |
Radar Pulsed Power Transistor - 100 Watts, 1.1-1.3 GHz, 3ms Pulse, 30% Duty |
Tyco Electronics |
| 364 |
PH2323-1 |
CW Power Transistor, 1W 2.3 GHz |
Tyco Electronics |
| 365 |
PH2323-14 |
CW Power Transistor,14W 2.3 GHz |
Tyco Electronics |
| 366 |
PH2323-3 |
CW Power Transistor, 3.5W 2.3 GHz |
Tyco Electronics |
| 367 |
PH2323-5 |
CW Power Transistor, 5W ,2.3 GHz |
Tyco Electronics |
| 368 |
PM5307 |
9.953 Gbit/s Telecom Bus Serializer |
PMC-Sierra Inc |
| 369 |
PM5392 |
SATURN User Network Interface for 9.953 Gbit/s |
PMC-Sierra Inc |
| 370 |
PMB7850 |
E -GOLD+ V3 GSM / GPRS Single Chip Baseb and IC |
Infineon |
| 371 |
PTB20051 |
6 Watts, 1.465�1.513 GHz Cellular Radio RF Power Transistor |
Ericsson Microelectronics |
| 372 |
PTB20141 |
18 Watts, 1.465�1.513 GHz Cellular Radio RF Power Transistor |
Ericsson Microelectronics |
| 373 |
PTN3360DBS |
Enhanced performance HDMI/DVI level shifter with active DDC buffer, supporting 3 Gbit/s operation |
NXP Semiconductors |
| 374 |
Q62702-A1025 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 375 |
Q62702-A1036 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 376 |
Q62702-A1037 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 377 |
Q62702-A1038 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 378 |
Q62702-A1039 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 379 |
Q62702-A1261 |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 380 |
Q62702-A1267 |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 381 |
Q62702-A1268 |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 382 |
Q62702-L96 |
GaAs FET (Power amplifier for mobile phones For frequencies up to 3 GHz) |
Siemens |
| 383 |
Q8486A |
Q8486A Thermocouple Waveguide Power Sensor, 33 GHz to 50 GHz |
Agilent (Hewlett-Packard) |
| 384 |
Q8486D |
Q8486D Waveguide Power Sensor, 33 GHz to 50 GHz |
Agilent (Hewlett-Packard) |
| 385 |
QPA2626D |
17 - 23 GHz Low Noise Amplifier Die |
Qorvo |
| 386 |
QPD1019 |
500 Watt, 50 Volt, 2.9 - 3.3 GHz, GaN RF IMFET |
Qorvo |
| 387 |
QPD2210 |
10 - 13 GHz GaAs Low Noise Amplifier |
Qorvo |
| 388 |
QPL1002 |
0.03 - 3 GHz GaN Low Noise Amplifier |
Qorvo |
| 389 |
QPL2210 |
10 - 13 GHz GaAs Low Noise Amplifier |
Qorvo |
| 390 |
RF3817 |
Cascadable Broadband GaAs MMIC Amplifier DC to 3 GHz |
RF Micro Devices |
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