| No. |
Part Name |
Description |
Manufacturer |
| 361 |
PE9302-00 |
3.5 GHz low power CMOS divide-by-4 prescaler for RAD-hard applications |
Peregrine Semiconductor |
| 362 |
PE9302-01 |
3.5 GHz low power CMOS divide-by-4 prescaler for RAD-hard applications |
Peregrine Semiconductor |
| 363 |
PE9302-11 |
3.5 GHz low power CMOS divide-by-4 prescaler for RAD-hard applications |
Peregrine Semiconductor |
| 364 |
PE9303-00 |
3.5 GHz low power CMOS divide-by-8 prescaler for RAD-hard applications |
Peregrine Semiconductor |
| 365 |
PE9303-01 |
3.5 GHz low power CMOS divide-by-8 prescaler for RAD-hard applications |
Peregrine Semiconductor |
| 366 |
PE9303-11 |
3.5 GHz low power CMOS divide-by-8 prescaler for RAD-hard applications |
Peregrine Semiconductor |
| 367 |
PH2323-3 |
2300 MHz, 3.5 W, CW power transistor |
MA-Com |
| 368 |
PH3135-20M |
Radar Pulsed Power Transistor, 20W,100ms Pulse,10% Duty 3.1-3.5 GHz |
Tyco Electronics |
| 369 |
PH3135-30M |
Radar Pulsed Power Transistor, 3OW, IOOms Pulse, 10% Duty 3.1 - 3.5 GHz |
Tyco Electronics |
| 370 |
PH3135-5M |
Radar Pulsed Power Transistor, 5W, looms Pulse, 10% Duty 3.1 - 3.5 GHz |
Tyco Electronics |
| 371 |
PH3135-5S |
Radar Pulsed Power Transistor,5W,2ms Pulse, 10% Duty 3.1-3.5 GHz |
Tyco Electronics |
| 372 |
PHA3135-130M |
RadarPulsedPowerModule, 115, 130,145W,100msPulse 3.1 - 3.5 GHz |
Tyco Electronics |
| 373 |
PMDPB65UP |
20 V, 3.5 A dual P-channel Trench MOSFET |
NXP Semiconductors |
| 374 |
PMFPB6532UP |
20 V, 3.5 A / 320 mV VF P-channel MOSFET-Schottky combination |
NXP Semiconductors |
| 375 |
PMFPB6545UP |
20 V, 3.5 A / 440 mV VF P-channel MOSFET-Schottky combination |
NXP Semiconductors |
| 376 |
PMT(301)3.5 |
3.5 KV High-speed, high-current surge protector |
Clare Inc |
| 377 |
PMV48XP |
20 V, 3.5 A P-channel Trench MOSFET |
Nexperia |
| 378 |
PMV48XP |
20 V, 3.5 A P-channel Trench MOSFET |
NXP Semiconductors |
| 379 |
PSMN3R3-80BS |
N-channel 80 V, 3.5 mΩ standard level MOSFET in D2PAK |
Nexperia |
| 380 |
PSMN3R3-80BS |
N-channel 80 V, 3.5 mΩ standard level MOSFET in D2PAK |
NXP Semiconductors |
| 381 |
PSMN3R5-30YL |
N-channel 30 V 3.5 mΩ logic level MOSFET in LFPAK |
Nexperia |
| 382 |
PSMN3R5-30YL |
N-channel 30 V 3.5 mΩ logic level MOSFET in LFPAK |
NXP Semiconductors |
| 383 |
PSMN3R5-40YSD |
N-channel 40 V, 3.5 mΩ, 120 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology |
Nexperia |
| 384 |
PSMN3R5-80ES |
N-channel 80 V, 3.5 mΩ standard level MOSFET in I2PAK |
Nexperia |
| 385 |
PSMN3R5-80ES |
N-channel 80 V, 3.5 mΩ standard level MOSFET in I2PAK |
NXP Semiconductors |
| 386 |
PSMN3R5-80PS |
N-channel 80 V, 3.5 mΩ standard level MOSFET in TO-220 |
Nexperia |
| 387 |
PSMN3R5-80PS |
N-channel 80 V, 3.5 mΩ standard level MOSFET in TO-220 |
NXP Semiconductors |
| 388 |
PSP-500-13.5 |
Input voltage 90-264 VAC;output voltage 13.5 VDC;output current:37 A; 500 W enclosed parallel power supply |
FranMar International |
| 389 |
PT9784/A |
150 Watt linear amplifier 2 to 28MHz, 13.5 Volt D.C. |
Motorola |
| 390 |
Q62702G0077 |
GaAs MMIC (Dual band GSM/PCN power amplifier 35dBm / 34dBm output power at 3.5 V Two amplifiers in a single package) |
Siemens |
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