| No. |
Part Name |
Description |
Manufacturer |
| 361 |
BUK9207-30B |
N-channel TrenchMOS logic level FET |
Nexperia |
| 362 |
BUK9207-30B |
N-channel TrenchMOS logic level FET |
NXP Semiconductors |
| 363 |
BUK9207-30B |
Trenchmos (tm) logic level FET |
Philips |
| 364 |
BUK9207-30B |
BUK9207-30B; Trenchmos (tm) logic level FET |
Philips |
| 365 |
BUK9207-30B |
BUK9207-30B; Trenchmos (tm) logic level FET |
Philips |
| 366 |
BUK9507-30B |
N-channel TrenchMOS logic level FET |
NXP Semiconductors |
| 367 |
BUK9507-30B |
TrenchMOS (tm) logic level FET |
Philips |
| 368 |
BUK952R8-30B |
N-channel TrenchMOS logic level FET |
NXP Semiconductors |
| 369 |
BUK952R8-30B |
TrenchMOS(TM) logic level FET |
Philips |
| 370 |
BUK9607-30B |
N-channel TrenchMOS logic level FET |
NXP Semiconductors |
| 371 |
BUK9607-30B |
TrenchMOS (tm) logic level FET |
Philips |
| 372 |
BUK962R8-30B |
N-channel TrenchMOS logic level FET |
NXP Semiconductors |
| 373 |
BUK962R8-30B |
TrenchMOS(TM) logic level FET |
Philips |
| 374 |
BUK9E04-30B |
N-channel TrenchMOS logic level FET |
NXP Semiconductors |
| 375 |
BUK9E04-30B |
Trenchmos (tm) logic level FET |
Philips |
| 376 |
BUK9E04-30B |
BUK9E04-30B; Trenchmos (tm) logic level FET |
Philips |
| 377 |
BUK9E04-30B |
BUK9E04-30B; Trenchmos (tm) logic level FET |
Philips |
| 378 |
BUK9Y07-30B |
N-channel TrenchMOS logic level FET |
Nexperia |
| 379 |
BUK9Y07-30B |
N-channel TrenchMOS logic level FET |
NXP Semiconductors |
| 380 |
BUK9Y11-30B |
N-channel TrenchMOS logic level FET |
Nexperia |
| 381 |
BUK9Y11-30B |
N-channel TrenchMOS logic level FET |
NXP Semiconductors |
| 382 |
BUK9Y22-30B |
N-channel TrenchMOS logic level FET |
Nexperia |
| 383 |
BUK9Y22-30B |
N-channel TrenchMOS logic level FET |
NXP Semiconductors |
| 384 |
C1Z330B |
Leaded Zener Diode General Purpose |
Central Semiconductor |
| 385 |
C230B |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Repetitive peak off-state voltage 200 V. |
Motorola |
| 386 |
C230B3 |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Repetitive peak off-state voltage 200 V. |
Motorola |
| 387 |
C430B |
200V, phase control single thyristor |
Powerex Power Semiconductors |
| 388 |
C430BX500 |
Phase Control SCR 800 Amperes Avg 100-600 Volts |
Powerex Power Semiconductors |
| 389 |
C430BX550 |
Phase Control SCR 800 Amperes Avg 100-400 Volts |
Powerex Power Semiconductors |
| 390 |
CA3130BS |
COS/MOS Operational Amplifiers |
RCA Solid State |
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