| No. |
Part Name |
Description |
Manufacturer |
| 361 |
MAX8554EEE+T |
4.5V to 28V Input, Synchronous PWM Buck Controllers for DDR Termination and Point-of-Load Applications |
MAXIM - Dallas Semiconductor |
| 362 |
MAX864EEE |
Dual-Output Charge Pump with Shutdown |
MAXIM - Dallas Semiconductor |
| 363 |
MAX864EEE+ |
Dual-Output Charge Pump with Shutdown |
MAXIM - Dallas Semiconductor |
| 364 |
MAX864EEE+T |
Dual-Output Charge Pump with Shutdown |
MAXIM - Dallas Semiconductor |
| 365 |
MAX864EEE-T |
Dual-Output Charge Pump with Shutdown |
MAXIM - Dallas Semiconductor |
| 366 |
MAX8934EETI+ |
Dual-Input Linear Chargers, Smart Power Selector with Advanced Battery Temperature Monitoring |
MAXIM - Dallas Semiconductor |
| 367 |
MAX8934EETI+T |
Dual-Input Linear Chargers, Smart Power Selector with Advanced Battery Temperature Monitoring |
MAXIM - Dallas Semiconductor |
| 368 |
MAX964EEE |
Single/Dual/Quad / Ultra-High-Speed / +3V/+5V /Beyond-the-Rails Comparators |
MAXIM - Dallas Semiconductor |
| 369 |
MAX964EEE+ |
Single/Dual/Quad, Ultra-High-Speed, +3V/+5V, Beyond-the-Rails Comparators |
MAXIM - Dallas Semiconductor |
| 370 |
MAX964EEE+T |
Single/Dual/Quad, Ultra-High-Speed, +3V/+5V, Beyond-the-Rails Comparators |
MAXIM - Dallas Semiconductor |
| 371 |
MB84VD22184EE |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM |
Fujitsu Microelectronics |
| 372 |
MB84VD22184EE-90 |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM |
Fujitsu Microelectronics |
| 373 |
MB84VD22184EE-90-PBS |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM |
Fujitsu Microelectronics |
| 374 |
MB84VD22194EE |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM |
Fujitsu Microelectronics |
| 375 |
MB84VD22194EE-90 |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM |
Fujitsu Microelectronics |
| 376 |
MB84VD22194EE-90-PBS |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM |
Fujitsu Microelectronics |
| 377 |
MB84VD22284EE |
32M (X 8/X16) FLASH MEMORY & 8M (X 8/X16) STATIC RAM |
Fujitsu Microelectronics |
| 378 |
MB84VD22284EE-90 |
32M (x 8/x16) FLASH MEMORY & 8M (x 8/x16) STATIC RAM |
Fujitsu Microelectronics |
| 379 |
MB84VD22284EE-90-PBS |
32M (X 8/X16) FLASH MEMORY & 8M (X 8/X16) STATIC RAM |
Fujitsu Microelectronics |
| 380 |
MB84VD22284EE-90-PBS |
32M (x 8/x16) FLASH MEMORY & 8M (x 8/x16) STATIC RAM |
Fujitsu Microelectronics |
| 381 |
MB84VD22294EE |
32M (X 8/X16) FLASH MEMORY & 8M (X 8/X16) STATIC RAM |
Fujitsu Microelectronics |
| 382 |
MB84VD22294EE-90 |
32M (x 8/x16) FLASH MEMORY & 8M (x 8/x16) STATIC RAM |
Fujitsu Microelectronics |
| 383 |
MB84VD22294EE-90-PBS |
32M (X 8/X16) FLASH MEMORY & 8M (X 8/X16) STATIC RAM |
Fujitsu Microelectronics |
| 384 |
MB84VD22294EE-90-PBS |
32M (x 8/x16) FLASH MEMORY & 8M (x 8/x16) STATIC RAM |
Fujitsu Microelectronics |
| 385 |
PDTA114EE |
PNP resistor-equipped transistors; R1 = 10 kΩ; R2 = 10 kΩ |
Nexperia |
| 386 |
PDTA114EE |
PNP resistor-equipped transistors; R1 = 10 kΩ; R2 = 10 kΩ |
NXP Semiconductors |
| 387 |
PDTA114EE |
PNP resistor-equipped transistor |
Philips |
| 388 |
PDTA114EEF |
PNP resistor-equipped transistor |
Philips |
| 389 |
PDTA124EE |
PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ |
Nexperia |
| 390 |
PDTA124EE |
PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ |
NXP Semiconductors |
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