| No. |
Part Name |
Description |
Manufacturer |
| 361 |
1N5529B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 362 |
1N5529B |
Low Voltage Avalanche Zener |
Microsemi |
| 363 |
1N5529B |
Low Voltage Avalanche Zener |
Microsemi |
| 364 |
1N5529B |
Diode Zener Single 9.1V 5% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 365 |
1N5529B (DO35) |
Low Voltage Avalanche Zener |
Microsemi |
| 366 |
1N5529B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 367 |
1N5529B-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 368 |
1N5529B-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 369 |
1N5529BUR |
Zener Voltage Regulator Diode |
Microsemi |
| 370 |
1N5529BUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 371 |
1N5529BUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 372 |
1N5529C |
Leaded Zener Diode General Purpose |
Central Semiconductor |
| 373 |
1N5529C |
0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. +-2% tolerance. |
Jinan Gude Electronic Device |
| 374 |
1N5529C |
Diode Zener Single 9.1V 2% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 375 |
1N5529C-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 376 |
1N5529C-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 377 |
1N5529CUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 378 |
1N5529CUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 379 |
1N5529D |
0.4W LOW VOLTAGE AVALANCHE DIODES |
Jinan Gude Electronic Device |
| 380 |
1N5529D |
Diode Zener Single 9.1V 1% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 381 |
1N5529D-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 382 |
1N5529D-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 383 |
1N5529DUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 384 |
1N5529DUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 385 |
1N5552 |
Leaded Rectifier Fast Recovery |
Central Semiconductor |
| 386 |
1N5552 |
GLASS PASSIVATED JUNCTION RECTIFIER |
General Semiconductor |
| 387 |
1N5552 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 388 |
1N5552 |
Diode Switching 600V 3A 2-Pin GPR-3A |
New Jersey Semiconductor |
| 389 |
1N5552 |
5A standard recovery rectifier diode, 600V |
Semtech |
| 390 |
1N5552 |
Standard Sinterglass Diode |
Vishay |
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