| No. |
Part Name |
Description |
Manufacturer |
| 361 |
ISPLSI2064V-60LJ84 |
3.3V High Density Programmable Logic |
Lattice Semiconductor |
| 362 |
ISPLSI2064V-60LJ84I |
3.3V High Density Programmable Logic |
Lattice Semiconductor |
| 363 |
ISPLSI2064V-60LT100 |
3.3V High Density Programmable Logic |
Lattice Semiconductor |
| 364 |
ISPLSI2064V-60LT100I |
3.3V High Density Programmable Logic |
Lattice Semiconductor |
| 365 |
ISPLSI2064V-60LT44 |
3.3V High Density Programmable Logic |
Lattice Semiconductor |
| 366 |
ISPLSI2064V-60LT44I |
3.3V High Density Programmable Logic |
Lattice Semiconductor |
| 367 |
ISPLSI81080V-60LB272 |
3.3V In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
| 368 |
ISPLSI81080V-60LB492 |
3.3V In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
| 369 |
ISPLSI8600V-60LB272 |
3.3V In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
| 370 |
ISPLSI8600V-60LB492 |
3.3V In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
| 371 |
ISPLSI8840-60LB432 |
In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
| 372 |
JAN2N2060L |
NPN Dual Transistors |
Microsemi |
| 373 |
JANTX2N2060L |
NPN Dual Transistors |
Microsemi |
| 374 |
JANTXV2N2060L |
NPN Dual Transistors |
Microsemi |
| 375 |
KF1N60L |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
| 376 |
KF2N60L |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
| 377 |
KMH160LG561M35X50LL |
THE KMH SERIES CAPACITORS ARE COMPUTER GRADE CAPACITORS DESIGNED FOR A VERY LING LIFETIME |
etc |
| 378 |
KT860L11 |
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches. Electrical parameter A lead spacing .320 inches. Aperture width in front of sensor .010 inches. Aperture width in front of emitter . |
Optek Technology |
| 379 |
KT860L15 |
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches. Electrical parameter A lead spacing .320 inches. Aperture width in front of sensor .010 inches. Aperture width in front of emitter . |
Optek Technology |
| 380 |
KT860L51 |
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter A lead spacing .320inches. Aperture in front of sensor .050inches. Aperture width in front of emitter |
Optek Technology |
| 381 |
LNG260LBR |
Opto-Electronic Device - Visible Light Emitting Diodes - Point-Lighting LEDs |
Panasonic |
| 382 |
LNG260LKR |
Opto-Electronic Device - Visible Light Emitting Diodes - Point-Lighting LEDs |
Panasonic |
| 383 |
LP62E16256CU-60LLT |
60ns; operating current:30mA; standby current:10uA; 256 x 16bit low voltage CMOS SRAM |
AMIC Technology |
| 384 |
LP62E16256CV-60LLT |
60ns; operating current:30mA; standby current:10uA; 256 x 16bit low voltage CMOS SRAM |
AMIC Technology |
| 385 |
LT1460LHS8-2.5 |
Micropower Precision Series Reference |
Linear Technology |
| 386 |
LT1460LHS8-2.5#PBF |
Micropower Precision Series Reference Family |
Linear Technology |
| 387 |
LT1460LHS8-2.5#TR |
Micropower Precision Series Reference Family |
Linear Technology |
| 388 |
LT1460LHS8-2.5#TRPBF |
Micropower Precision Series Reference Family |
Linear Technology |
| 389 |
LT1460LHS8-5 |
Micropower Precision Series Reference |
Linear Technology |
| 390 |
LT1460LHS8-5#PBF |
Micropower Precision Series Reference Family |
Linear Technology |
| | | |
