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Datasheets for A L

Datasheets found :: 31178
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No. Part Name Description Manufacturer
361 2N3439 1.000W General Purpose NPN Metal Can Transistor. 350V Vceo, 1.000A Ic, 40 - 160 hFE. Continental Device India Limited
362 2N3440 1.000W High Voltage NPN Metal Can Transistor. 250V Vceo, 1.000A Ic, 40 - 160 hFE. Continental Device India Limited
363 2N3445 NPN silicon power transistor, fast response, wide band and good Beta linearity Motorola
364 2N3446 NPN silicon power transistor, fast response, wide band and good Beta linearity Motorola
365 2N3447 NPN silicon power transistor, fast response, wide band and good Beta linearity Motorola
366 2N3448 NPN silicon power transistor, fast response, wide band and good Beta linearity Motorola
367 2N3478 0.200W General Purpose NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 25 - 150 hFE. Continental Device India Limited
368 2N3496 0.400W General Purpose PNP Metal Can Transistor. 80V Vceo, 0.100A Ic, 35 hFE. Continental Device India Limited
369 2N3497 0.400W General Purpose PNP Metal Can Transistor. 120V Vceo, 0.100A Ic, 35 hFE. Continental Device India Limited
370 2N3498 1.000W RF NPN Metal Can Transistor. 100V Vceo, 0.500A Ic, 20 hFE. Continental Device India Limited
371 2N3499 1.000W RF NPN Metal Can Transistor. 100V Vceo, 0.500A Ic, 35 hFE. Continental Device India Limited
372 2N3500 1.000W RF NPN Metal Can Transistor. 150V Vceo, 0.300A Ic, 20 hFE. Continental Device India Limited
373 2N3501 1.000W RF NPN Metal Can Transistor. 150V Vceo, 0.300A Ic, 35 hFE. Continental Device India Limited
374 2N3635 1.000W RF PNP Metal Can Transistor. 140V Vceo, 1.000A Ic, 80 hFE. Continental Device India Limited
375 2N3636 1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 40 hFE. Continental Device India Limited
376 2N3637 1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 80 hFE. Continental Device India Limited
377 2N3700 0.500W General Purpose NPN Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. Continental Device India Limited
378 2N3702 0.625W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.600A Ic, 60 - 300 hFE Continental Device India Limited
379 2N3704 0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.600A Ic, 100 - 300 hFE Continental Device India Limited
380 2N3705 0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.600A Ic, 50 - 150 hFE Continental Device India Limited
381 2N3707 0.360W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.200A Ic, 100 - 400 hFE Continental Device India Limited
382 2N3724 1.000W Switching NPN Metal Can Transistor. 30V Vceo, 1.000A Ic, 60 - 150 hFE. Continental Device India Limited
383 2N3725 1.000W Switching NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 60 - 150 hFE. Continental Device India Limited
384 2N3772 150.000W Power NPN Metal Can Transistor. 60V Vceo, 20.000A Ic, 15 - 60 hFE. Continental Device India Limited
385 2N3773 150.000W Power NPN Metal Can Transistor. 140V Vceo, 16.000A Ic, 5 hFE. Continental Device India Limited
386 2N3773 High power NPN transistor. High power audio and linear applications. Vceo = 140Vdc, Vcer = 150Vdc, Vcb = 160Vdc, Veb = 7Vdc, Ic = 16Adc, Ib = 4Adc, PD = 150W. USHA India LTD
387 2N3773AR NPN silicon power transistor. 16Amp, 140V, 150Watt. High power audio, disk head positioners and other linear applications. Power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. USHA India LTD
388 2N3867 1.000W General Purpose PNP Metal Can Transistor. 40V Vceo, 3.000A Ic, 40 - 200 hFE. Continental Device India Limited
389 2N3903 0.625W General Purpose NPN Plastic Leaded Transistor. 40V Vceo, 0.200A Ic, 20 - hFE Continental Device India Limited
390 2N3903 General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. USHA India LTD


Datasheets found :: 31178
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