No. |
Part Name |
Description |
Manufacturer |
361 |
2N3632 |
RF & MICROWAVE TRANSISTORS VHF-UHF CLASS C WIDE BAND |
Microsemi |
362 |
2N3733 |
RF & MICROWAVE TRANSISTORS VHF-UHF CLASS C WIDE BAND |
Microsemi |
363 |
2N3866 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
364 |
2N3866A |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
365 |
2N4427 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
366 |
2N4429 |
Microwave Power NPN Transistor for CLASS C applications |
SGS Thomson Microelectronics |
367 |
2N4430 |
Microwave Power NPN Transistor for CLASS C applications |
SGS Thomson Microelectronics |
368 |
2N4431 |
Microwave Power NPN Transistor for CLASS C applications |
SGS Thomson Microelectronics |
369 |
2N4440 |
RF & MICROWAVE TRANSISTORS WIDEBAND VHF-UHF CLASS C |
Microsemi |
370 |
2N5031 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
371 |
2N5109 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
372 |
2N5179 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
373 |
2N5596 |
Application Note - Match impedances in microwave amplifiers |
Motorola |
374 |
2N5920 |
2W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Microwave Transistor |
RCA Solid State |
375 |
2N6080 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
376 |
2N6081 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
377 |
2N6083 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
378 |
2N6084 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
379 |
2N6255 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
380 |
2N6266 |
10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note |
RCA Solid State |
381 |
2N6267 |
10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note |
RCA Solid State |
382 |
2N6304 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
383 |
2SA1224 |
PNP medium power microwave transistor (This datasheet of the NE90115 is also the datasheet of 2SA1224, see the Electrical Characteristics table) |
NEC |
384 |
2SA1977 |
PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER |
NEC |
385 |
2SA1978 |
PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER |
NEC |
386 |
2SC1193 |
Silicon NPN epitaxial planar microwave transistor |
TOSHIBA |
387 |
2SC1200 |
Silicon NPN epitaxial planar microwave transistor, UHF-S band power amplifier or oscillator applications |
TOSHIBA |
388 |
2SC1236 |
Silicon NPN epitaxial planar microwave transistor |
TOSHIBA |
389 |
2SC1260 |
NPN silicon microwave transistor (This datasheet of NE87112 is also the datasheet of 2SC1260, see the Electrical Characteristics table) |
NEC |
390 |
2SC1600 |
NPN medium power microwave transistor (This datasheet of NE57510 is also the datasheet of 2SC1600-Grd D, see the Electrical Characteristics table) |
NEC |
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