| No. |
Part Name |
Description |
Manufacturer |
| 361 |
MD918A |
NPN DUAL SILICON TRANSISTOR |
Central Semiconductor |
| 362 |
MD918A |
NPN DUAL SILICON TRANSISTOR |
Central Semiconductor |
| 363 |
MD918A |
Dual NPN silicon annular transistor designed for ultra-high frequency oscillator and amplifier amplifier applications |
Motorola |
| 364 |
MD918A |
NPN silicon dual amplifier transistor. |
Motorola |
| 365 |
MD918A |
NPN DUAL SILICON TRANSISTOR |
New Jersey Semiconductor |
| 366 |
MD918AF |
Dual NPN silicon annular transistor designed for ultra-high frequency oscillator and amplifier amplifier applications, TO-89 case |
Motorola |
| 367 |
MD918AF |
NPN silicon dual amplifier transistor. |
Motorola |
| 368 |
MD918B |
NPN DUAL SILICON TRANSISTOR |
Central Semiconductor |
| 369 |
MD918B |
NPN DUAL SILICON TRANSISTOR |
Central Semiconductor |
| 370 |
MD918B |
Dual NPN silicon annular transistor designed for ultra-high frequency oscillator and amplifier amplifier applications |
Motorola |
| 371 |
MD918B |
NPN silicon dual amplifier transistor. |
Motorola |
| 372 |
MD918B |
NPN DUAL SILICON TRANSISTOR |
New Jersey Semiconductor |
| 373 |
MD918BF |
Dual NPN silicon annular transistor designed for ultra-high frequency oscillator and amplifier amplifier applications, TO-89 case |
Motorola |
| 374 |
MD918F |
Dual NPN silicon annular transistor designed for ultra-high frequency oscillator and amplifier amplifier applications, TO-89 case |
Motorola |
| 375 |
MDE-10D911K |
910V; max peak current:3500A; metal oxide varistor. Standard D series 10mm disc |
MDE Semiconductor |
| 376 |
MDE-14D911K |
METAL OXIDE VARISTORS |
etc |
| 377 |
MDE-14D911K |
910V; max peak current:5000A; metal oxide varistor. Standard D series 14mm disc |
MDE Semiconductor |
| 378 |
MDE-20D911K |
Metal Oxide Varistors |
etc |
| 379 |
MDE-20D911K |
910V; max peak current:75000A; metal oxide varistor. Standard D series 20mm disc |
MDE Semiconductor |
| 380 |
MDE-25D911K |
910V; max peak current:18000A; metal oxide varistor. Standard D series 25mm disc |
MDE Semiconductor |
| 381 |
MDE-32D911K |
910V; max peak current:25000A; metal oxide varistor. High energy series 32mm single disc |
MDE Semiconductor |
| 382 |
MDE-40D911K |
910V; max peak current:40000A; metal oxide varistor. High energy series 40mm single disc |
MDE Semiconductor |
| 383 |
MDE-53D911K |
910V; max peak current:70000A; metal oxide varistor. High energy series 53mm single disc |
MDE Semiconductor |
| 384 |
MLED910 |
Infrared LED 900nM PN Gallium Arsenide 350mW |
Motorola |
| 385 |
MMBD914 |
Switching Diodes |
Diodes |
| 386 |
MMBD914 |
Small Signal Diode |
Fairchild Semiconductor |
| 387 |
MMBD914 |
SMALL SIGNAL SWITCHING DIODE |
General Semiconductor |
| 388 |
MMBD914 |
Silicon Switching Diode |
Infineon |
| 389 |
MMBD914 |
SURFACE MOUNT SWITCHING DIODES |
Jinan Gude Electronic Device |
| 390 |
MMBD914 |
100V ultra fast recovery rectifier |
MCC |
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