| No. |
Part Name |
Description |
Manufacturer |
| 361 |
BAW100 |
Silicon Switching Diode Array for hig... |
Infineon |
| 362 |
BAW100 |
Silicon Switching Diode Array (For high-speed switching Electrically insulated diodes) |
Siemens |
| 363 |
BAW101 |
General Purpose Diodes - Silicon Switching Diode Array with medium-speed diodes |
Infineon |
| 364 |
BAW101 |
Silicon Switching Diode Array (Electrically insulated high-voltage medium-speed diodes) |
Siemens |
| 365 |
BAW156 |
General Purpose Diodes - Silicon Low Leakage Diode Array |
Infineon |
| 366 |
BAW156 |
Silicon Low Leakage Diode Array (Low-leakage applications Medium speed switching times Common anode) |
Siemens |
| 367 |
BAW56 |
Silicon Switching Diode Array with co... |
Infineon |
| 368 |
BAW56 |
General Purpose Diodes - Silicon Switching Diode Array with common cathode |
Infineon |
| 369 |
BAW56 |
Silicon Switching Diode Array (For high-speed switching applications Common anode) |
Siemens |
| 370 |
BAW56S |
Silicon Switching Diode Array |
Infineon |
| 371 |
BAW56S |
General Purpose Diodes - Silicon Switching Diode Array with common cathode |
Infineon |
| 372 |
BAW56S |
High-speed double diode array |
Philips |
| 373 |
BAW56S |
Silicon Switching Diode Array (For high-speed switching applications Common anode) |
Siemens |
| 374 |
BAW56U |
General Purpose Diodes - Silicon Switching Diode Array for high-speed switching |
Infineon |
| 375 |
BAW56W |
General Purpose Diodes - Silicon Switching Diode Array with common cathode |
Infineon |
| 376 |
BAW56W |
Silicon Switching Diode Array (For high speed switching applications Common anode) |
Siemens |
| 377 |
BAW756DW |
100V; 300mA quad surface mount swithcing diode array. For general purpose switching applications |
Diodes |
| 378 |
BCM8441 |
16-Port 1/2/4 Gbps Fibre Channel Fabric Switch for Storage Array Platforms |
Broadcom |
| 379 |
BGX50A |
General Purpose Diodes - Silicon Switching Diode Array with bridge configuration |
Infineon |
| 380 |
BGX50A |
Silicon Switching Diode Array (Bridge configuration High-speed switch diode chip) |
Siemens |
| 381 |
BSM150GB120DN2E3166 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 382 |
BSM150GB170DN2E3166 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 383 |
BSM300GA120DN2E3166 |
IGBT Power Module (Single switch Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 384 |
BSM300GA170DN2E3166 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 385 |
BSM35GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Doubled diode area) |
Siemens |
| 386 |
C4258-01 |
Infrared power supply; fast response of 50ps; active area: 0.2mm x 0.2mm; picosecond photodetector |
Hamamatsu Corporation |
| 387 |
C4258-02 |
Infrared power supply; fast response of 50ps; active area: 0.2mm x 0.2mm; picosecond photodetector |
Hamamatsu Corporation |
| 388 |
C4258-03 |
Infrared power supply; fast response of 50ps; active area: 0.2mm x 0.2mm; picosecond photodetector |
Hamamatsu Corporation |
| 389 |
C4675 |
16 x 16 element photodiode array detector |
Hamamatsu Corporation |
| 390 |
C4675-102 |
16 x 16 element photodiode array detector |
Hamamatsu Corporation |
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