| No. |
Part Name |
Description |
Manufacturer |
| 361 |
NNCD3.6F |
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES DOUBLE TYPE, ANODE COMMON 3PIN MINI MOLD |
NEC |
| 362 |
NNCD3.9F |
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES DOUBLE TYPE, ANODE COMMON 3PIN MINI MOLD |
NEC |
| 363 |
NNCD4.3F |
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES DOUBLE TYPE, ANODE COMMON 3PIN MINI MOLD |
NEC |
| 364 |
NNCD4.7F |
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES DOUBLE TYPE, ANODE COMMON 3PIN MINI MOLD |
NEC |
| 365 |
NNCD5.1F |
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES DOUBLE TYPE, ANODE COMMON 3PIN MINI MOLD |
NEC |
| 366 |
NNCD5.6F |
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES DOUBLE TYPE, ANODE COMMON 3PIN MINI MOLD |
NEC |
| 367 |
NNCD6.2F |
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES DOUBLE TYPE, ANODE COMMON 3PIN MINI MOLD |
NEC |
| 368 |
NNCD6.8F |
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES DOUBLE TYPE, ANODE COMMON 3PIN MINI MOLD |
NEC |
| 369 |
NNCD7.5F |
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES DOUBLE TYPE, ANODE COMMON 3PIN MINI MOLD |
NEC |
| 370 |
NNCD8.2F |
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES DOUBLE TYPE, ANODE COMMON 3PIN MINI MOLD |
NEC |
| 371 |
NNCD9.1F |
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES DOUBLE TYPE, ANODE COMMON 3PIN MINI MOLD |
NEC |
| 372 |
P8251A |
Programmable communication interface (USART) |
Intel |
| 373 |
Q-62702-G66 |
GaAs MMIC (Variable gain amplifier MMIC-Amplifier for mobile communication Typical Gain Control range over 50dB) |
Siemens |
| 374 |
Q62702-A1188 |
Silicon Schottky Diode (Rectifier Schottky diode with extreme low VF drop for mobile communication For power supply |
Siemens |
| 375 |
Q62702-A1189 |
Silicon Schottky Diode (Rectifier Schottky diode for mobile communication Low voltage high inductane For power supply |
Siemens |
| 376 |
Q62702-A733 |
Silicon Switching Diodes (For high-speed switching High breakdown voltage Common cathode) |
Siemens |
| 377 |
Q62702-A771 |
Silicon Switching Diodes (For high-speed switching High breakdown voltage Common cathode) |
Siemens |
| 378 |
Q62702-A781 |
Silicon Switching Diodes (For high-speed switching High breakdown voltage Common cathode) |
Siemens |
| 379 |
Q62702-A782 |
Silicon Switching Diodes (For high-speed switching High breakdown voltage Common cathode) |
Siemens |
| 380 |
Q62702-A914 |
Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode) |
Siemens |
| 381 |
Q62702-A915 |
Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode) |
Siemens |
| 382 |
Q62702-A916 |
Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode) |
Siemens |
| 383 |
Q62702-A917 |
Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode) |
Siemens |
| 384 |
Q62702-F1296 |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) |
Siemens |
| 385 |
Q62702-F1298 |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Siemens |
| 386 |
Q62702-F1377 |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) |
Siemens |
| 387 |
Q62702-F1378 |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Siemens |
| 388 |
Q62702-F1490 |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) |
Siemens |
| 389 |
Q62702-F1494 |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems |
Siemens |
| 390 |
Q62702-F1500 |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) |
Siemens |
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