| No. |
Part Name |
Description |
Manufacturer |
| 361 |
15KW130 |
130.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 362 |
15KW130A |
130.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 363 |
15KW150 |
150.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 364 |
15KW150A |
150.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 365 |
15KW160 |
160.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 366 |
15KW160A |
160.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 367 |
15KW170 |
170.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 368 |
15KW170A |
170.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 369 |
15KW180 |
180.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 370 |
15KW180A |
180.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 371 |
15KW200 |
200.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 372 |
15KW200A |
200.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 373 |
15KW220 |
220.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 374 |
15KW220A |
220.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 375 |
15KW240 |
240.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 376 |
15KW240A |
240.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 377 |
15KW260 |
260.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 378 |
15KW260A |
260.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 379 |
15KW280 |
280.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 380 |
15KW280A |
280.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 381 |
160V |
In-System Programmable 3.3V Generic Digital CrosspointTM |
Lattice Semiconductor |
| 382 |
163CNQ060 |
The 163CNQ isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature |
International Rectifier |
| 383 |
163CNQ080 |
The 163CNQ isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature |
International Rectifier |
| 384 |
163CNQ090 |
The 163CNQ isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature |
International Rectifier |
| 385 |
163CNQ100 |
The 163CNQ isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature |
International Rectifier |
| 386 |
1N4001G |
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS |
EIC discrete Semiconductors |
| 387 |
1N4002G |
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS |
EIC discrete Semiconductors |
| 388 |
1N4003G |
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS |
EIC discrete Semiconductors |
| 389 |
1N4004G |
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS |
EIC discrete Semiconductors |
| 390 |
1N4005G |
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS |
EIC discrete Semiconductors |
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