| No. |
Part Name |
Description |
Manufacturer |
| 361 |
1S98 |
General-Purpose silicon rectifier 0.3A |
TOSHIBA |
| 362 |
1S99 |
General-Purpose silicon rectifier 0.3A |
TOSHIBA |
| 363 |
1SS154 |
Diode Silicon Epitaxial Schottky Barrier Type UHF~S Band Mixer/Detector Applications |
TOSHIBA |
| 364 |
1SS181 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 365 |
1SS184 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 366 |
1SS187 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 367 |
1SS190 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 368 |
1SS193 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 369 |
1SS196 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 370 |
1SS200 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 371 |
1SS201 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 372 |
1SS226 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 373 |
1SS250 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 374 |
1SS271 |
DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE VHF~UHF MIXER APPLICATION |
TOSHIBA |
| 375 |
1SS272 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 376 |
1SS293 |
Diode Silicon Epitaxial Schottoky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 377 |
1SS294 |
Diode Silicon Epitaxial Schottoky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 378 |
1SS295 |
DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE UHF BAND MIXER APPLICATIONS |
TOSHIBA |
| 379 |
1SS300 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
| 380 |
1SS301 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
| 381 |
1SS302 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
| 382 |
1SS306 |
Diode Silicon Epitaxial Planar Type High Voltage,High Speed Switching Applications |
TOSHIBA |
| 383 |
1SS307 |
Diode Silicon Epitaxial Planar Type General Puropose Rectifier Applications |
TOSHIBA |
| 384 |
1SS308 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
| 385 |
1SS309 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
| 386 |
1SS311 |
Diode Silicon Epitaxial Planar Type High Voltage,High Speed Switching Applications |
TOSHIBA |
| 387 |
1SS314 |
Diode Silicon Epitaxial Planar Type VHF Tuner Band Switch Applications |
TOSHIBA |
| 388 |
1SS315 |
Diode Silicon Epitaxial Schottky Barrier Type UHF Band Mixer Applications |
TOSHIBA |
| 389 |
1SS319 |
Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching |
TOSHIBA |
| 390 |
1SS321 |
Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching |
TOSHIBA |
| | | |
