| No. |
Part Name |
Description |
Manufacturer |
| 361 |
28LV256TC-6 |
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 362 |
28LV256TI-3 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
| 363 |
28LV256TI-3 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 364 |
28LV256TI-4 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
| 365 |
28LV256TI-4 |
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 366 |
28LV256TI-5 |
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 367 |
28LV256TI-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
| 368 |
28LV256TI-6 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
Turbo IC |
| 369 |
28LV256TI-6 |
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 370 |
28LV256TM-3 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 371 |
28LV256TM-3 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
| 372 |
28LV256TM-4 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
| 373 |
28LV256TM-4 |
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 374 |
28LV256TM-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
| 375 |
28LV256TM-5 |
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 376 |
28LV256TM-6 |
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 377 |
28LV256TM-6 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
Turbo IC |
| 378 |
2N4044 |
Dielectrically Isolated Monolithic Dual NPN General Purpose Amplifier |
Intersil |
| 379 |
2N4045 |
Dielectrically Isolated Monolithic Dual NPN General Purpose Amplifier |
Intersil |
| 380 |
2N4100 |
Dielectrically Isolated Monolithic Dual NPN General Purpose Amplifier |
Intersil |
| 381 |
2N4878 |
Dielectrically Isolated Monolithic Dual NPN General Purpose Amplifier |
Intersil |
| 382 |
2N4879 |
Dielectrically Isolated Monolithic Dual NPN General Purpose Amplifier |
Intersil |
| 383 |
2N4880 |
Dielectrically Isolated Monolithic Dual NPN General Purpose Amplifier |
Intersil |
| 384 |
2N5117 |
DIELECTRICALLY ISOLATED DUAL PNP GENERAL PURPOSE AMPLLIFIER |
Intersil |
| 385 |
2N5118 |
DIELECTRICALLY ISOLATED DUAL PNP GENERAL PURPOSE AMPLLIFIER |
Intersil |
| 386 |
2N5119 |
DIELECTRICALLY ISOLATED DUAL PNP GENERAL PURPOSE AMPLLIFIER |
Intersil |
| 387 |
2SA1223 |
PNP silicon high frequency transistor (This datasheet of the NE88935 is also the datasheet of 2SA1223, see the Electrical Characteristics table) |
NEC |
| 388 |
2SA1224 |
PNP medium power microwave transistor (This datasheet of the NE90115 is also the datasheet of 2SA1224, see the Electrical Characteristics table) |
NEC |
| 389 |
2SA1228 |
PNP silicon high frequency transistor (This datasheet of NE88912 is also the datasheet of 2SA1228, see the Electrical Characteristics table) |
NEC |
| 390 |
2SA1424 |
PNP silicon high frequency transistor (This datasheet of NE88933 is also the datasheet of 2SA1424, see the Electrical Characteristics table) |
NEC |
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