| No. |
Part Name |
Description |
Manufacturer |
| 361 |
2N6705 |
0.850W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 40 - hFE |
Continental Device India Limited |
| 362 |
2N6707 |
0.850W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 40 - hFE |
Continental Device India Limited |
| 363 |
2N6708 |
0.850W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 40 - hFE |
Continental Device India Limited |
| 364 |
2N6709 |
0.850W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 40 - hFE |
Continental Device India Limited |
| 365 |
2N6710 |
0.850W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 40 - hFE |
Continental Device India Limited |
| 366 |
2N6714 |
0.750W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 1.000A Ic, 55 - hFE |
Continental Device India Limited |
| 367 |
2N6715 |
0.750W General Purpose NPN Plastic Leaded Transistor. 40V Vceo, 1.500A Ic, 55 - hFE |
Continental Device India Limited |
| 368 |
2N6716 |
0.850W General Purpose NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 80 - hFE |
Continental Device India Limited |
| 369 |
2N6717 |
0.850W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 80 - hFE |
Continental Device India Limited |
| 370 |
2N6718 |
0.850W General Purpose NPN Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 80 - hFE |
Continental Device India Limited |
| 371 |
2N6719 |
0.850W General Purpose NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 25 - hFE |
Continental Device India Limited |
| 372 |
2N6726 |
0.850W General Purpose PNP Plastic Leaded Transistor. 30V Vceo, 2.000A Ic, 55 - hFE |
Continental Device India Limited |
| 373 |
2N6727 |
0.850W General Purpose PNP Plastic Leaded Transistor. 40V Vceo, 1.000A Ic, 55 - hFE |
Continental Device India Limited |
| 374 |
2N6728 |
0.850W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 80 - hFE |
Continental Device India Limited |
| 375 |
2N6729 |
0.850W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 80 - hFE |
Continental Device India Limited |
| 376 |
2N6730 |
0.850W General Purpose PNP Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 80 - hFE |
Continental Device India Limited |
| 377 |
2N6740 |
100.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 8.000A Ic, 10 - 40 hFE. |
Continental Device India Limited |
| 378 |
2N697 |
0.600W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.500A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 379 |
2N699 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, 0.500A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 380 |
2N708 |
0.360W General Purpose NPN Metal Can Transistor. 15V Vceo, 0.200A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 381 |
2N718A |
0.500W General Purpose NPN Metal Can Transistor. 50V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
| 382 |
2N720A |
0.500W Switching NPN Metal Can Transistor. 80V Vceo, A Ic, 20 hFE. |
Continental Device India Limited |
| 383 |
2N915 |
0.360W General Purpose NPN Metal Can Transistor. 50V Vceo, A Ic, 50 - 200 hFE. |
Continental Device India Limited |
| 384 |
2N917 |
0.200W RF NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 20 - 200 hFE. |
Continental Device India Limited |
| 385 |
2N918 |
0.200W RF NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 20 hFE. |
Continental Device India Limited |
| 386 |
2N930 |
0.500W General Purpose NPN Metal Can Transistor. 45V Vceo, 0.030A Ic, - 600 hFE. |
Continental Device India Limited |
| 387 |
2N930A |
0.500W General Purpose NPN Metal Can Transistor. 45V Vceo, 0.030A Ic, 100 - 600 hFE. |
Continental Device India Limited |
| 388 |
2SC3198 |
TO-92 Plastic Package Transistors (NPN) |
Continental Device India Limited |
| 389 |
54ACQ244PMQB |
Quiet series octal buffer/line driver with TRI-STATE outputs. Military grade device with environmental and burn-in processing chipped in tubes. |
National Semiconductor |
| 390 |
54ACQ244QMQB |
Quiet series octal buffer/line driver with TRI-STATE outputs. Military grade device with environmental and burn-in processing chipped in tubes. |
National Semiconductor |
| | | |
