| No. |
Part Name |
Description |
Manufacturer |
| 361 |
BFT93 |
PNP Silicon RF Transistor for broadba... |
Infineon |
| 362 |
BFT93 |
PNP Silicon RF Transistor (For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA) |
Siemens |
| 363 |
BFW17 |
Silicon NPN epitaxial planar RF transistor of the multi-emitter design |
ICCE |
| 364 |
BFY180 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA) |
Siemens |
| 365 |
BFY181 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) |
Siemens |
| 366 |
BFY182 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) |
Siemens |
| 367 |
BFY183 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) |
Siemens |
| 368 |
BFY193 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers up to 2 GHz.) |
Siemens |
| 369 |
BFY196 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz.) |
Siemens |
| 370 |
BFY280 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) |
Siemens |
| 371 |
BFY33 |
Double-diffused NPN silicon RF Transistor in planar technology |
TUNGSRAM |
| 372 |
BFY34 |
Double-diffused NPN silicon RF Transistor in planar technology |
TUNGSRAM |
| 373 |
BFY46 |
Double-diffused NPN silicon RF Transistor in planar technology |
TUNGSRAM |
| 374 |
BFY88 |
Silicon NPN epitaxial planar RF transistor designed for use in UHF amplifier stages, emitter grounded input stages and oscillating mixer stages |
AEG-TELEFUNKEN |
| 375 |
BGC405 |
Active Biased RF Transistor (RF MMIC) |
Infineon |
| 376 |
BSY17 |
NPN RF transistor for switch applications |
Siemens |
| 377 |
BSY18 |
NPN RF transistor for switch applications |
Siemens |
| 378 |
BSY34 |
NPN RF transistor for switch applications |
Siemens |
| 379 |
BSY34 |
Double-diffused epitaxial NPN silicon RF Transistor in planar technology |
TUNGSRAM |
| 380 |
BSY58 |
NPN RF transistor for switch applications |
Siemens |
| 381 |
BSY58 |
Double-diffused epitaxial NPN silicon RF Transistor in planar technology |
TUNGSRAM |
| 382 |
BSY62 |
NPN RF transistor for switch applications |
Siemens |
| 383 |
BSY62A |
NPN RF transistor for switch applications |
Siemens |
| 384 |
BSY62B |
NPN RF transistor for switch applications |
Siemens |
| 385 |
BSY63 |
NPN RF transistor for switch applications |
Siemens |
| 386 |
C62702-C747 |
NPN Silicon AF Transistor (High current gain High collector current) |
Siemens |
| 387 |
C62702-C748 |
PNP Silicon AF Transistor (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
| 388 |
CLASS C POWER |
RF transistor design |
Motorola |
| 389 |
ENA1075A |
RF Transistor 10V, 30mA, fT=8GHz, NPN Single SMCP |
ON Semiconductor |
| 390 |
LT1001A |
RF Transistor High fT - 3.0GHz, low distorsion, low noise figure 2.5dB at 300MHz |
TRW |
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