No. |
Part Name |
Description |
Manufacturer |
361 |
2N3055/6 |
NPN Low frequency, power silicon transistor |
IPRS Baneasa |
362 |
2N3055/6 |
Silicon NPN Single Diffused Low Frequency Power Transistor |
IPRS Baneasa |
363 |
2N3055/7 |
NPN Low frequency, power silicon transistor |
IPRS Baneasa |
364 |
2N3055/7 |
Silicon NPN Single Diffused Low Frequency Power Transistor |
IPRS Baneasa |
365 |
2N3055/8 |
NPN Low frequency, power silicon transistor |
IPRS Baneasa |
366 |
2N3055/8 |
Silicon NPN Single Diffused Low Frequency Power Transistor |
IPRS Baneasa |
367 |
2N3055/9 |
NPN Low frequency, power silicon transistor |
IPRS Baneasa |
368 |
2N3055/9 |
Silicon NPN Single Diffused Low Frequency Power Transistor |
IPRS Baneasa |
369 |
2N3055H |
Silicon NPN Single Diffused Low Frequency Power Transistor |
IPRS Baneasa |
370 |
2N3055W |
Silicon NPN Single Diffused Low Frequency Power Transistor |
IPRS Baneasa |
371 |
2N319 |
PNP germanium transistor for audio amplifier and low-frequency switching applications |
Motorola |
372 |
2N320 |
PNP germanium transistor for audio amplifier and low-frequency switching applications |
Motorola |
373 |
2N321 |
PNP germanium transistor for audio amplifier and low-frequency switching applications |
Motorola |
374 |
2N3210 |
NPN silicon high frequency switching transistor for industrial service |
Motorola |
375 |
2N3211 |
NPN silicon high frequency switching transistor for industrial service |
Motorola |
376 |
2N3262 |
Triple-diffused planar transistor of the silicon NPN type intended for high-voltage, high-frequency pulse ampliers |
RCA Solid State |
377 |
2N3279 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
378 |
2N3280 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
379 |
2N3281 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
380 |
2N3282 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
381 |
2N3375 |
Silicon NPN epitaxial high frequency power transistor for VHF and UHF power stages, oscillators and driver stages |
AEG-TELEFUNKEN |
382 |
2N3375 |
High Frequency NPN transistor |
CCSIT-CE |
383 |
2N3375 |
NPN Silicon High-Frequency Transistor |
Siemens |
384 |
2N3423 |
Dual NPN silicon transistor designed for use as sens and high-frequency differential amplifiers |
Motorola |
385 |
2N3424 |
Dual NPN silicon transistor designed for use as sens and high-frequency differential amplifiers |
Motorola |
386 |
2N3425 |
Dual NPN silicon transistor designed for use as a high-frequency sense amplifier |
Motorola |
387 |
2N3441 |
Silicon NPN Single Diffused Low Frequency Power Transistor |
IPRS Baneasa |
388 |
2N3442 |
Silicon NPN Single Diffused Low Frequency Power Transistor |
IPRS Baneasa |
389 |
2N3442 |
Low frequency transistor |
mble |
390 |
2N3442 |
Low frequency transistor |
mble |
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