| No. |
Part Name |
Description |
Manufacturer |
| 361 |
AT24C02A |
2/4/8/16K, 2-Wire Bus Serial EEPROM. Utilizes different Array Protection compared to the AT24C02/04/08 |
Atmel |
| 362 |
AT24C04A |
2/4/8/16K, 2-Wire Bus Serial EEPROM. Utilizes different Array Protection compared to the AT24C02/04/08 |
Atmel |
| 363 |
AT24C08A |
2/4/8/16K, 2-Wire Bus Serial EEPROM. Utilizes different Array Protection compared to the AT24C02/04/08 |
Atmel |
| 364 |
AT24C16A |
2/4/8/16K, 2-Wire Bus Serial EEPROM. Utilizes different Array Protection compared to the AT24C02/04/08 |
Atmel |
| 365 |
BA723 |
βA723 Voltage stabilizer |
IPRS Baneasa |
| 366 |
BA723C |
βA723C Voltage stabilizer |
IPRS Baneasa |
| 367 |
BAP811 |
Dioda stabilizacyjna |
Ultra CEMI |
| 368 |
BAP812 |
Dioda stabilizacyjna |
Ultra CEMI |
| 369 |
BF1005 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 370 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 371 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
| 372 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
| 373 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 374 |
BFR90 |
Epitaxial planar NPN transistor, utilizing Planox® silicon nitride, intended for VHF-UHF wide band applications |
SGS-ATES |
| 375 |
BFR94 |
NPN resistance-stabilizer transistor in a SOT-48 capstan envelope, very low cross modulation, intermodulation and second harmonic distortion |
Philips |
| 376 |
BFR95 |
NPN resistance stabilized transistor in a TO-39 metal anvelope |
Philips |
| 377 |
BP103 |
NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
Siemens |
| 378 |
BP103-2 |
NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
Siemens |
| 379 |
BP103-3 |
NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
Siemens |
| 380 |
BP103-4 |
NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
Siemens |
| 381 |
BP103-5 |
NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
Siemens |
| 382 |
BP103B |
NPN-Silizium-Fototransistor NEU: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter |
Siemens |
| 383 |
BP103B |
NPN-Silizium-Fototransistor NEU: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter |
Siemens |
| 384 |
BP103B |
.NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
Siemens |
| 385 |
BP103B-2 |
.NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
Siemens |
| 386 |
BP103B-2 |
NPN-Silizium-Fototransistor NEU: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter |
Siemens |
| 387 |
BP103B-2 |
NPN-Silizium-Fototransistor NEU: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter |
Siemens |
| 388 |
BP103B-3 |
NPN-Silizium-Fototransistor NEU: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter |
Siemens |
| 389 |
BP103B-3 |
NPN-Silizium-Fototransistor NEU: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter |
Siemens |
| 390 |
BP103B-3 |
.NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
Siemens |
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