No. |
Part Name |
Description |
Manufacturer |
361 |
54F413D-CQB |
64 x 4 First-In First-Out Buffer Memory with Parallel I/O |
National Semiconductor |
362 |
54F413D-CQB |
64 x 4 First-In First-Out Buffer Memory with Parallel I/O |
National Semiconductor |
363 |
54F413D-MQB |
64 x 4 First-In First-Out Buffer Memory with Parallel I/O |
National Semiconductor |
364 |
54F413DM |
64 x 4 First-In First-Out Buffer Memory with Parallel I/O |
National Semiconductor |
365 |
54F413DMQB |
64 x 4 First-In First-Out Buffer Memory with Parallel I/O |
National Semiconductor |
366 |
54F413DMQB |
64 x 4 First-In First-Out Buffer Memory with Parallel I/O |
National Semiconductor |
367 |
54F413MW8 |
64 x 4 First-In First-Out Buffer Memory with Parallel I/O |
National Semiconductor |
368 |
54F413P-CQB |
64 x 4 First-In First-Out Buffer Memory with Parallel I/O |
National Semiconductor |
369 |
54F413P-MQB |
64 x 4 First-In First-Out Buffer Memory with Parallel I/O |
National Semiconductor |
370 |
54F418 |
32-Bit Memory Error Detection And Correction Circuit |
Fairchild Semiconductor |
371 |
54F610 |
Memory Mappers With 3-State Outputs and Output Latches |
Fairchild Semiconductor |
372 |
54F612 |
Memory Mappers With 3-State Outputs and Output Latches |
Fairchild Semiconductor |
373 |
54LS189DM |
V(cc): +5.0V; 64-bit random access memory (with 3-state outputs) |
Fairchild Semiconductor |
374 |
54LS189FM |
V(cc): +5.0V; 64-bit random access memory (with 3-state outputs) |
Fairchild Semiconductor |
375 |
54S189DM |
V(cc): +5.0V; 64-bit random access memory (with 3-state outputs) |
Fairchild Semiconductor |
376 |
54S189FM |
V(cc): +5.0V; 64-bit random access memory (with 3-state outputs) |
Fairchild Semiconductor |
377 |
54S416T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
378 |
54S416T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
379 |
54S416T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
380 |
5962-8751505LX |
Memory : PROMs |
Cypress |
381 |
5962-8751506LX |
Memory : PROMs |
Cypress |
382 |
5962-87515073X |
Memory : PROMs |
Cypress |
383 |
5962-8751508LX |
Memory : PROMs |
Cypress |
384 |
5962-8751512LX |
Memory : PROMs |
Cypress |
385 |
5962-8863603LX |
Memory : PROMs |
Cypress |
386 |
5962-8863604LX |
Memory : PROMs |
Cypress |
387 |
5962-8981701ZX |
Memory : PROMs |
Cypress |
388 |
5962-8981702XX |
Memory : PROMs |
Cypress |
389 |
5962-8981702ZX |
Memory : PROMs |
Cypress |
390 |
5962-9067801MXC |
High Performance Microprocessor with Memory Management and Protection |
Intersil |
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