| No. |
Part Name |
Description |
Manufacturer |
| 361 |
CLR4185 |
40 V, silicon NPN planar expitaxial darlington phototransistor |
Clairex Technologies |
| 362 |
CLR5101 |
40 V, silicon NPN planar expitaxial darlington phototransistor |
Clairex Technologies |
| 363 |
CNX35 |
6-PIN PHOTOTRANSISTOR OPTOCOUPLERS |
Fairchild Semiconductor |
| 364 |
CNX35U |
6-PIN PHOTOTRANSISTOR OPTOCOUPLERS |
Fairchild Semiconductor |
| 365 |
CNX36 |
6-PIN PHOTOTRANSISTOR OPTOCOUPLERS |
Fairchild Semiconductor |
| 366 |
CNX36U |
6-PIN PHOTOTRANSISTOR OPTOCOUPLERS |
Fairchild Semiconductor |
| 367 |
CNX38 |
6-PIN PHOTOTRANSISTOR OPTOCOUPLERS |
Fairchild Semiconductor |
| 368 |
CNX38U |
6-PIN PHOTOTRANSISTOR��OPTOCOUPLERS |
Fairchild Semiconductor |
| 369 |
CNX39 |
6-PIN PHOTOTRANSISTOR OPTOCOUPLERS |
Fairchild Semiconductor |
| 370 |
CNX39U |
6-PIN PHOTOTRANSISTOR OPTOCOUPLERS |
Fairchild Semiconductor |
| 371 |
CNX82 |
6-PIN PHOTOTRANSISTOR OPTOCOUPLERS |
Fairchild Semiconductor |
| 372 |
CNX82A |
6-PIN PHOTOTRANSISTOR OPTOCOUPLERS |
Fairchild Semiconductor |
| 373 |
CNX82A.300W |
6-PIN PHOTOTRANSISTOR OPTOCOUPLERS |
Fairchild Semiconductor |
| 374 |
CNX82A.W |
6-PIN PHOTOTRANSISTOR OPTOCOUPLERS |
Fairchild Semiconductor |
| 375 |
CNX82A.W |
6-pin phototransistor optocouplers |
QT Optoelectronics |
| 376 |
CNX82AW |
6-pin phototransistor optocouplers |
QT Optoelectronics |
| 377 |
CNX83A |
6-pin phototransistor optocouplers |
QT Optoelectronics |
| 378 |
CNX83A.300W |
6-PIN PHOTOTRANSISTOR OPTOCOUPLERS |
Fairchild Semiconductor |
| 379 |
CNX83A.W |
6-PIN PHOTOTRANSISTOR OPTOCOUPLERS |
Fairchild Semiconductor |
| 380 |
CNX83A.W |
6-pin phototransistor optocouplers |
QT Optoelectronics |
| 381 |
CQY10 |
Gallium arsenide luminiscence diode, infrared source for high modulation frequencies. The spectral emission is in range of the spectral sensitivity of silicon photoelektronic devices |
AEG-TELEFUNKEN |
| 382 |
CQY13 |
Solid-state photo-relays consisting of a GaAs electroluminiscent diode and a silicon n-p-n photo-transistor |
Mullard |
| 383 |
CQY23 |
Solid-state photo-relays consisting of a GaAs electroluminiscent diode and a silicon n-p-n photo-transistor |
Mullard |
| 384 |
D171 |
D171-Type FastLight �� PIN Photodetectors |
Agere Systems |
| 385 |
D171C004BAA |
D171-Type FastLight �� PIN Photodetectors |
Agere Systems |
| 386 |
D171C004BAF |
D171-Type FastLight �� PIN Photodetectors |
Agere Systems |
| 387 |
D171C004CAN |
D171-Type FastLight �� PIN Photodetectors |
Agere Systems |
| 388 |
DF1 |
Germanium junction photodiode |
IPRS Baneasa |
| 389 |
ESM51 |
Silicon phototransistor |
SESCOSEM |
| 390 |
ESM52 |
Silicon phototransistor |
SESCOSEM |
| | | |
