| No. |
Part Name |
Description |
Manufacturer |
| 361 |
2SC1120 |
Industrial Transistor Specification Table |
TOSHIBA |
| 362 |
2SC1121 |
Industrial Transistor Specification Table |
TOSHIBA |
| 363 |
2SC1122 |
Industrial Transistor Specification Table |
TOSHIBA |
| 364 |
2SC1165 |
Industrial Transistor Specification Table |
TOSHIBA |
| 365 |
2SC1193 |
Industrial Transistor Specification Table |
TOSHIBA |
| 366 |
2SC1200 |
Industrial Transistor Specification Table |
TOSHIBA |
| 367 |
2SC1236 |
Industrial Transistor Specification Table |
TOSHIBA |
| 368 |
2SC1380 |
Silicon NPN epitaxial transistor (PCT Process) for industrial applications |
TOSHIBA |
| 369 |
2SC1380A |
Silicon NPN epitaxial transistor (PCT Process) for industrial applications |
TOSHIBA |
| 370 |
2SC1927 |
NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE |
NEC |
| 371 |
2SC199 |
Industrial Transistor Specification Table |
TOSHIBA |
| 372 |
2SC2107 |
NPN Silicon Epitaxial Transistor, Industrial Use, General Purpose Amplifier and Switches |
NEC |
| 373 |
2SC2550 |
Silicon NPN Epitaxial type transistor (PCT Process) for industrial applications |
TOSHIBA |
| 374 |
2SC2750 |
High Speed High Current Switching Industrial Use |
Unknow |
| 375 |
2SC3218-M |
NPN SILICON EPITAXIAL TRANSISTOR FOR 860 MHZ WIDEBAND POWER AMPLIFIER INDUSTRIAL USE |
NEC |
| 376 |
2SC366G |
Industrial Transistor Specification Table |
TOSHIBA |
| 377 |
2SC367G |
Industrial Transistor Specification Table |
TOSHIBA |
| 378 |
2SC368 |
Industrial Transistor Specification Table |
TOSHIBA |
| 379 |
2SC369G |
Industrial Transistor Specification Table |
TOSHIBA |
| 380 |
2SC371G |
Industrial Transistor Specification Table |
TOSHIBA |
| 381 |
2SC372G |
Industrial Transistor Specification Table |
TOSHIBA |
| 382 |
2SC373G |
Industrial Transistor Specification Table |
TOSHIBA |
| 383 |
2SC3809 |
NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE |
NEC |
| 384 |
2SC3810 |
NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE |
NEC |
| 385 |
2SC387A |
Industrial Transistor Specification Table |
TOSHIBA |
| 386 |
2SC390 |
Industrial Transistor Specification Table |
TOSHIBA |
| 387 |
2SC392A |
Industrial Transistor Specification Table |
TOSHIBA |
| 388 |
2SC395 |
Silicon NPN epitaxial planar transistor (PCT Process) for industrial applications |
TOSHIBA |
| 389 |
2SC395A |
Industrial Transistor Specification Table |
TOSHIBA |
| 390 |
2SC397 |
Industrial Transistor Specification Table |
TOSHIBA |
| | | |
