| No. |
Part Name |
Description |
Manufacturer |
| 361 |
2-OC1074 |
Germanium junction PNP transistor |
TUNGSRAM |
| 362 |
2-OC26 |
Germanium PNP power transistor |
TUNGSRAM |
| 363 |
2001 |
1 W, 28 V, 2000 MHz common base transistor |
GHz Technology |
| 364 |
2001 |
2GHz 1W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 365 |
2003 |
3 W, 28 V, 2000 MHz common base transistor |
GHz Technology |
| 366 |
2003 |
2GHz 3W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 367 |
2005 |
5 W, 28 V, 2000 MHz common base transistor |
GHz Technology |
| 368 |
2005 |
2GHz 5W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 369 |
2010 |
10 W, 28 V, 2000 MHz common base transistor |
GHz Technology |
| 370 |
2010 |
2GHz 10W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 371 |
2015M |
15 W, 28 V, 2000 MHz common base transistor |
GHz Technology |
| 372 |
2021-25 |
25 W, 24 V, 2000-2130 MHz common base transistor |
GHz Technology |
| 373 |
2023-1 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 374 |
2023-16 |
2.0-2.3GHz 16W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 375 |
2023-3 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 376 |
2023-6 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 377 |
2023-6 |
2.0-2.3GHz 6W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 378 |
20L08 |
2.0GHz 0.8W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 379 |
20L15 |
2.0GHz 1.5W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 380 |
2100 |
2.0GHz 0.316W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 381 |
2124-12L |
12 W, 22 V, 2200-2400 MHz common base transistor |
GHz Technology |
| 382 |
2223-1.7 |
1.7 W, 24 V, 2200-2300 MHz common base transistor |
GHz Technology |
| 383 |
2223-10 |
2.2-2.3GHz 10W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 384 |
2223-14 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 385 |
2223-18 |
2.2-2.3GHz 18W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 386 |
2223-3 |
2.2-2.3GHz 3W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 387 |
2223-9A |
9 W, 24 V, 2200-2300 MHz common base transistor |
GHz Technology |
| 388 |
2224-12L |
12 W, 22 V, 2200-2400 MHz common base transistor |
GHz Technology |
| 389 |
2225-4L |
3.5 W, 24 V, 2200-2500 MHz common base transistor |
GHz Technology |
| 390 |
2301 |
2.3GHz 1W 22V microwave power transistor for class C applications |
SGS Thomson Microelectronics |
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