No. |
Part Name |
Description |
Manufacturer |
361 |
BLV80/28 |
VHF Power NPN silicon planar epitaxial transistor intended for use in base stations in the VHF mobile radio band |
Philips |
362 |
BP3595 |
Compact Wireless LAN Module with Integrated Antenna |
ROHM |
363 |
BP359B |
Compliant Wireless LAN Module with Integrated Antenna |
ROHM |
364 |
BPT1819E03 |
High Performance Silicon Bipolar Transistor Intended |
etc |
365 |
BU126 |
Silicon NPN triple diffused MESA high voltage power transistor intended for use in the switched mode power supply of television receivers |
TOSHIBA |
366 |
BY176 |
Silicon E.H.T. Rectifier Diode intended for tripler voltage circuits |
Philips |
367 |
BY185 |
Silicon E.H.T. Rectifier Diode, intended for use in horizontal deflection |
Philips |
368 |
BY187 |
Silicon E.H.T. Rectifier Diode, intended for tripler circuits |
Philips |
369 |
BYX13-1000 |
Silicon Rectifier Diode, intended for power rectifier applications, normal polarity |
Philips |
370 |
BYX13-1000R |
Silicon Rectifier Diode, intended for power rectifier applications, reverse polarity |
Philips |
371 |
BYX13-1200 |
Silicon Rectifier Diode, intended for power rectifier applications, normal polarity |
Philips |
372 |
BYX13-1200R |
Silicon Rectifier Diode, intended for power rectifier applications, reverse polarity |
Philips |
373 |
BYX13-800 |
Silicon Rectifier Diode, intended for power rectifier applications, normal polarity |
Philips |
374 |
BYX13-800R |
Silicon Rectifier Diode, intended for power rectifier applications, reverse polarity |
Philips |
375 |
BYX13-SERIES |
Silicon Rectifier Diode, intended for power rectifier applications |
Philips |
376 |
BYX35 |
Silicon High Voltage Diode, intended for the high voltage power supply of X-ray, electron microscope and LASER equipment |
Philips |
377 |
BZX75 |
Stabistors, diodes with controlled conductance intended for low voltage regulation |
Philips |
378 |
BZX75-C1V4 |
Stabistors, diodes with controlled conductance intended for low voltage regulation |
Philips |
379 |
BZX75-C2V1 |
Stabistors, diodes with controlled conductance intended for low voltage regulation |
Philips |
380 |
BZX75-C2V8 |
Stabistors, diodes with controlled conductance intended for low voltage regulation |
Philips |
381 |
BZX75-C3V6 |
Stabistors, diodes with controlled conductance intended for low voltage regulation |
Philips |
382 |
C4880-80-12A |
10-bit idigital CCD camera. For faint light observation under a microscope, continuous imaging of high-speed moving objects, kinetic changes in light intensity |
Hamamatsu Corporation |
383 |
C4880-80-14A |
10-bit idigital CCD camera. For faint light observation under a microscope, continuous imaging of high-speed moving objects, kinetic changes in light intensity |
Hamamatsu Corporation |
384 |
C4880-80-22A |
12-bit idigital CCD camera. For faint light observation under a microscope, continuous imaging of high-speed moving objects, kinetic changes in light intensity |
Hamamatsu Corporation |
385 |
C4880-80-24A |
12-bit idigital CCD camera. For faint light observation under a microscope, continuous imaging of high-speed moving objects, kinetic changes in light intensity |
Hamamatsu Corporation |
386 |
CC2564MODA |
Dual-mode Bluetooth? CC2564 module with integrated antenna |
Texas Instruments |
387 |
CC2564MODACMOG |
Dual-mode Bluetooth? CC2564 module with integrated antenna |
Texas Instruments |
388 |
COP320 |
COPS Family Users Guide Table of Contents |
National Semiconductor |
389 |
COP321 |
COPS Family Users Guide Table of Contents |
National Semiconductor |
390 |
COP322 |
COPS Family Users Guide Table of Contents |
National Semiconductor |
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