| No. |
Part Name |
Description |
Manufacturer |
| 361 |
BUZ73L |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level) |
Siemens |
| 362 |
BUZ74 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) |
Siemens |
| 363 |
BUZ74A |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) |
Siemens |
| 364 |
BUZ76 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) |
Siemens |
| 365 |
BUZ76A |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) |
Siemens |
| 366 |
BUZ77A |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) |
Siemens |
| 367 |
BUZ77B |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) |
Siemens |
| 368 |
BUZ78 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) |
Siemens |
| 369 |
BUZ80 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) |
Siemens |
| 370 |
BUZ81 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) |
Siemens |
| 371 |
BUZ90 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) |
Siemens |
| 372 |
BUZ90A |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) |
Siemens |
| 373 |
BUZ91A |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) |
Siemens |
| 374 |
BUZ92 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) |
Siemens |
| 375 |
BUZ93 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) |
Siemens |
| 376 |
C4675 |
16 x 16 element photodiode array detector |
Hamamatsu Corporation |
| 377 |
C4675-102 |
16 x 16 element photodiode array detector |
Hamamatsu Corporation |
| 378 |
C4675-103 |
16 x 16 element photodiode array detector |
Hamamatsu Corporation |
| 379 |
C4675-302 |
16 x 16 element photodiode array detector |
Hamamatsu Corporation |
| 380 |
C4890 |
Pin photodiode amplifier |
Hamamatsu Corporation |
| 381 |
C67070-A2007-A70 |
IGBT Power Module (Single switch Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 382 |
C67070-A2111-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Doubled diode area) |
Siemens |
| 383 |
C67070-A2709-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 384 |
C67070-A2710-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 385 |
C67076-A2112-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 386 |
C67078-S.1304-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) |
Siemens |
| 387 |
C67078-S1300-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) |
Siemens |
| 388 |
C67078-S1300-A7 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) |
Siemens |
| 389 |
C67078-S1301-A2 |
SIPMOS Power Transistorm (N channel Enhancement mode Avalanche-rated) |
Siemens |
| 390 |
C67078-S1301-A3 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) |
Siemens |
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