DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for ON 16

Datasheets found :: 800
Page: | 9 | 10 | 11 | 12 | 13 | 14 | 15 | 16 | 17 |
No. Part Name Description Manufacturer
361 MAX678AEWP 800mW; V(cc): -0.3 to +20V; calibrated, low-drift, +4.096V / +5V / +10V precision voltage reference. For high resolution 16-bit ADCs and DACs, precision test and measurement systems, precision calibrated voltage-reference, high-accuracy tr MAXIM - Dallas Semiconductor
362 MAX678AMJP 889mW; V(cc): -0.3 to +20V; calibrated, low-drift, +4.096V / +5V / +10V precision voltage reference. For high resolution 16-bit ADCs and DACs, precision test and measurement systems, precision calibrated voltage-reference, high-accuracy tr MAXIM - Dallas Semiconductor
363 MAX678BCPP 889mW; V(cc): -0.3 to +20V; calibrated, low-drift, +4.096V / +5V / +10V precision voltage reference. For high resolution 16-bit ADCs and DACs, precision test and measurement systems, precision calibrated voltage-reference, high-accuracy tr MAXIM - Dallas Semiconductor
364 MAX678BCWP 800mW; V(cc): -0.3 to +20V; calibrated, low-drift, +4.096V / +5V / +10V precision voltage reference. For high resolution 16-bit ADCs and DACs, precision test and measurement systems, precision calibrated voltage-reference, high-accuracy tr MAXIM - Dallas Semiconductor
365 MAX678BEPP 889mW; V(cc): -0.3 to +20V; calibrated, low-drift, +4.096V / +5V / +10V precision voltage reference. For high resolution 16-bit ADCs and DACs, precision test and measurement systems, precision calibrated voltage-reference, high-accuracy tr MAXIM - Dallas Semiconductor
366 MAX678BEWP 800mW; V(cc): -0.3 to +20V; calibrated, low-drift, +4.096V / +5V / +10V precision voltage reference. For high resolution 16-bit ADCs and DACs, precision test and measurement systems, precision calibrated voltage-reference, high-accuracy tr MAXIM - Dallas Semiconductor
367 MAX678BMJP 889mW; V(cc): -0.3 to +20V; calibrated, low-drift, +4.096V / +5V / +10V precision voltage reference. For high resolution 16-bit ADCs and DACs, precision test and measurement systems, precision calibrated voltage-reference, high-accuracy tr MAXIM - Dallas Semiconductor
368 MQ80C186 CHMOS high integration 16-bit microcontroller Intel
369 MS6266 6-Channel Volume Controller Gain and Attenuation 16~-79dB Low voltage, High Channel Separation etc
370 N80186 High-integration 16-bit microprocessor Intel
371 N80188 High Integration 16 Bit Microprocessor Advanced Micro Devices
372 N80188 High Integration 16 Bit Microprocessors Intel
373 NT128D64S88A0G-75B 128Mb unbuffered DDR SDRAM module based on 16Mx8 SDRAM NANYA
374 NT128D64S88A0G-7K 128Mb unbuffered DDR SDRAM module based on 16Mx8 SDRAM NANYA
375 NT128D64S88A0G-8B 128Mb unbuffered DDR SDRAM module based on 16Mx8 SDRAM NANYA
376 NT128D64S88A2GM-75B 128Mb unbuffered DDR SO-DIMM module based on 16Mx8 SDRAM NANYA
377 NT128D64S88A2GM-7K 128Mb unbuffered DDR SO-DIMM module based on 16Mx8 SDRAM NANYA
378 NT128D64S88A2GM-8B 128Mb unbuffered DDR SO-DIMM module based on 16Mx8 SDRAM NANYA
379 NT128S64V88C0G-75B 128Mb unbuffered SDRAM module based on 16Mx8, 4banks, 4K refresh, 3.3V synchronous DRAM with SPD NANYA
380 NT128S64V88C0G-7K 128Mb unbuffered SDRAM module based on 16Mx8, 4banks, 4K refresh, 3.3V synchronous DRAM with SPD NANYA
381 NT128S64V88C0G-8B 128Mb unbuffered SDRAM module based on 16Mx8, 4banks, 4K refresh, 3.3V synchronous DRAM with SPD NANYA
382 NT256S64V8HC0G-75B 256Mb: 32Mx64 SDRAM module based on 16Mx8, 4banks, 3.3V synchronous DRAM with SPD NANYA
383 NT256S64V8HC0G-7B 256Mb: 32Mx64 SDRAM module based on 16Mx8, 4banks, 3.3V synchronous DRAM with SPD NANYA
384 NT256S64V8HC0G-7K 256Mb: 32Mx64 SDRAM module based on 16Mx8, 4banks, 3.3V synchronous DRAM with SPD NANYA
385 NT256S64V8HC0G-8B 256Mb: 32Mx64 SDRAM module based on 16Mx8, 4banks, 3.3V synchronous DRAM with SPD NANYA
386 NT256S64VH8A0GM-75B 256Mb: 32Mx64 SDRAM module based on 16Mx16, 4Banks, 8K refresh, 3.3V synchronous DRAM with SPD NANYA
387 NT256S64VH8A0GM-7K 256Mb: 32Mx64 SDRAM module based on 16Mx16, 4Banks, 8K refresh, 3.3V synchronous DRAM with SPD NANYA
388 NT256S64VH8A0GM-8B 256Mb: 32Mx64 SDRAM module based on 16Mx16, 4Banks, 8K refresh, 3.3V synchronous DRAM with SPD NANYA
389 P13B16212A 32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD Samsung Electronic
390 P13B16212V 32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD Samsung Electronic


Datasheets found :: 800
Page: | 9 | 10 | 11 | 12 | 13 | 14 | 15 | 16 | 17 |



© 2024 - www Datasheet Catalog com