| No. |
Part Name |
Description |
Manufacturer |
| 361 |
HN4A08J |
Transistor for low frequency small-signal amplification 2 in 1 |
TOSHIBA |
| 362 |
HN4A51J |
Transistor for low frequency small-signal amplification 2 in 1 |
TOSHIBA |
| 363 |
HN4A56JU |
Transistor for low frequency small-signal amplification 2 in 1 |
TOSHIBA |
| 364 |
HN4B01JE |
Transistor for low frequency small-signal amplification 2 in 1 |
TOSHIBA |
| 365 |
HN4B04J |
Transistor for low frequency small-signal amplification 2 in 1 |
TOSHIBA |
| 366 |
HN4B06J |
Transistor for low frequency small-signal amplification 2 in 1 |
TOSHIBA |
| 367 |
HN4C06J |
Transistor for low frequency small-signal amplification 2 in 1 |
TOSHIBA |
| 368 |
HN4C51J |
Transistor for low frequency small-signal amplification 2 in 1 |
TOSHIBA |
| 369 |
HY57V281620ELT |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
Hynix Semiconductor |
| 370 |
HY57V281620ELT-5 |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
Hynix Semiconductor |
| 371 |
HY57V281620ELT-6 |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
Hynix Semiconductor |
| 372 |
HY57V281620ELT-7 |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
Hynix Semiconductor |
| 373 |
HY57V281620ELT-H |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
Hynix Semiconductor |
| 374 |
HY57V281620ELTP-6 |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
Hynix Semiconductor |
| 375 |
HY57V281620ELTP-7 |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
Hynix Semiconductor |
| 376 |
HY57V281620ELTP-H |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
Hynix Semiconductor |
| 377 |
HY57V281620ET-5 |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
Hynix Semiconductor |
| 378 |
HY57V281620ET-6 |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
Hynix Semiconductor |
| 379 |
HY57V281620ET-7 |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
Hynix Semiconductor |
| 380 |
HY57V281620ET-H |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
Hynix Semiconductor |
| 381 |
HY57V281620ETP-5 |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
Hynix Semiconductor |
| 382 |
HY57V281620ETP-6 |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
Hynix Semiconductor |
| 383 |
HY57V281620ETP-7 |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
Hynix Semiconductor |
| 384 |
HY57V281620ETP-H |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
Hynix Semiconductor |
| 385 |
IP1201 |
Dual Output Full Function 2 Phase Synchronous Power Block, Integrated Power Semiconductors, PWM Controller and Passives. |
International Rectifier |
| 386 |
IP1201PBF |
Dual Output Full Function 2 Phase Synchronous Power Block, Integrated Power Semiconductors, PWM Controller and Passives. |
International Rectifier |
| 387 |
IP1201TR |
Dual Output Full Function 2 Phase Synchronous Power Block, Integrated Power Semiconductors, PWM Controller and Passives. |
International Rectifier |
| 388 |
IP1201TRPBF |
Dual Output Full Function 2 Phase Synchronous Power Block, Integrated Power Semiconductors, PWM Controller and Passives. |
International Rectifier |
| 389 |
IP1202 |
Dual Output Full Function 2 Phase Synchronous Buck Power Block, Integrated Power Semiconductors, PWM Controller and Passives. |
International Rectifier |
| 390 |
IP1202TR |
Dual Output Full Function 2 Phase Synchronous Buck Power Block, Integrated Power Semiconductors, PWM Controller and Passives. |
International Rectifier |
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