| No. |
Part Name |
Description |
Manufacturer |
| 361 |
2SD2636 |
Power transistor for low frequency applications |
TOSHIBA |
| 362 |
2SD2686 |
Power transistor for low frequency applications |
TOSHIBA |
| 363 |
2SD2719 |
Power transistor for low frequency applications |
TOSHIBA |
| 364 |
2SD313 |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 40 @ Ic = 2A. Pd = 30W. |
USHA India LTD |
| 365 |
2SD414 |
PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS |
NEC |
| 366 |
2SD415 |
PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS |
NEC |
| 367 |
2SD525 |
Power transistor for low frequency applications |
TOSHIBA |
| 368 |
2SD592 |
Silicon NPN epitaxial planer type(For low-frequency output amplification) |
Panasonic |
| 369 |
2SD592 |
Silicon PNP epitaxial planer type(For low-frequency output amplification) |
Panasonic |
| 370 |
2SD639 |
Silicon PNP epitaxial planer type(For low-power general amplification) |
Panasonic |
| 371 |
2SD661 |
Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification) |
Panasonic |
| 372 |
2SD661 |
Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification) |
Panasonic |
| 373 |
2SD661A |
Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification) |
Panasonic |
| 374 |
2SD661A |
Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification) |
Panasonic |
| 375 |
2SD798 |
Power transistor for low frequency applications |
TOSHIBA |
| 376 |
2SD880Y |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 20 @ Ic = 3A. Pd = 30W. |
USHA India LTD |
| 377 |
2SD968 |
Silicon PNP epitaxial planer type(For low-frequency driver amplification) |
Panasonic |
| 378 |
2SD968 |
Silicon NPN epitaxial planer type(For low-frequency driver amplification) |
Panasonic |
| 379 |
2SD973 |
Silicon NPN epitaxial planer type(For low-frequency power amplification) |
Panasonic |
| 380 |
2SJ145 |
FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE |
Isahaya Electronics Corporation |
| 381 |
2SJ55 |
Silicon P-Channel MOS FET, for low frequency power amplifier, complementary pair with 2SK175 |
Hitachi Semiconductor |
| 382 |
2SJ56 |
Silicon P-Channel MOS FET, for low frequency power amplifier, complementary pair with 2SK176 |
Hitachi Semiconductor |
| 383 |
2SJ647 |
P-Channel enhancement MOS FET for load sw |
NEC |
| 384 |
2SJ648 |
P-Channel enhancement MOS FET for load sw |
NEC |
| 385 |
2SK2881 |
For Low Frequency Amplify Application N Channel Junction type Micro(Frame type) |
Isahaya Electronics Corporation |
| 386 |
2SK3060 |
Nch MOS FET for large current switching |
NEC |
| 387 |
2SK3062-Z |
Nch MOS FET for large current switching |
NEC |
| 388 |
2SK3320 |
Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications |
TOSHIBA |
| 389 |
2SK3663 |
N-Channel enhancement MOS FET for load sw |
NEC |
| 390 |
2SK3664 |
N-Channel enhancement MOS FET for load sw |
NEC |
| | | |
