| No. |
Part Name |
Description |
Manufacturer |
| 361 |
2SC4213 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications |
TOSHIBA |
| 362 |
2SC4851 |
NPN Epitaxial Planar Silicon Transistor Muting Circuits |
SANYO |
| 363 |
2SC4852 |
NPN Epitaxial Planar Silicon Transistor Muting Circuits |
SANYO |
| 364 |
2SC4909 |
NPN Epitaxial Planar Silicon Transistor Muting Circuits, Drivers |
SANYO |
| 365 |
2SC4919 |
NPN Epitaxial Planar Silicon Transistor Muting Circuit Applications |
SANYO |
| 366 |
2SC4920 |
NPN Epitaxial Planar Silicon Transistor Muting Circuit, Driver Applications |
SANYO |
| 367 |
2SC4921 |
NPN Epitaxial Planar Silicon Transistor Muting Circuit, Driver Applications |
SANYO |
| 368 |
2SC4922 |
NPN Epitaxial Planar Silicon Transistor Muting Circuit, Driver Applications |
SANYO |
| 369 |
2SC4954 |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 370 |
2SC4954-T1 |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 371 |
2SC4954-T2 |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 372 |
2SC4955 |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 373 |
2SC4955-T1 |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 374 |
2SC4955-T2 |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 375 |
2SC5369 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION |
NEC |
| 376 |
2SC5376 |
Transistor Silicon NPN Epitaxial Type Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications |
TOSHIBA |
| 377 |
2SC5376F |
Transistor Silicon NPN Epitaxial Type Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications |
TOSHIBA |
| 378 |
2SC5408 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
| 379 |
2SC5408-T1 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
| 380 |
2SC5409 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
| 381 |
2SC5409-T1 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
| 382 |
2SD1033 |
NPN SILICON EPITAXIAL TRANSISTOR MP-3 |
NEC |
| 383 |
2SD1160 |
Transistor Silicon NPN Epitaxial Type (PCT process) Switching Applications Suitable for Motor Drive Applications |
TOSHIBA |
| 384 |
2SD1164-Z |
NPN SILICON EPITAXIAL TRANSISTOR MP-3 |
NEC |
| 385 |
2SD1286 |
NPN SILICON EPITAXIAL TRANSISTOR MP-3 |
NEC |
| 386 |
2SD1286-Z |
NPN SILICON EPITAXIAL TRANSISTOR MP-3 |
NEC |
| 387 |
2SD1323 |
For midium speed power switching |
Panasonic |
| 388 |
2SD1326 |
Silicon NPN triple diffusion planar type Darlington For midium speed power switching |
Panasonic |
| 389 |
2SD1327 |
Silicon NPN triple diffusion planar type Darlington For midium speed power switching |
Panasonic |
| 390 |
2SD1583-Z |
NPN SILICON EPITAXIAL TRANSISTOR MP-3 |
NEC |
| | | |
