| No. |
Part Name |
Description |
Manufacturer |
| 361 |
2N939 |
PNP planar for alloy transistor replacements - silicon |
Sprague |
| 362 |
2N940 |
PNP planar for alloy transistor replacements - silicon |
Sprague |
| 363 |
2SA1287 |
FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 364 |
2SA1944 |
FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 365 |
2SC101 |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
| 366 |
2SC102 |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
| 367 |
2SC106 |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
| 368 |
2SC107 |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
| 369 |
2SC1590 |
Silicon NPN Transistor RF Power Output |
Unknow |
| 370 |
2SC161 |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
| 371 |
2SC1972 |
NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications) |
Mitsubishi Electric Corporation |
| 372 |
2SC21 |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
| 373 |
2SC3247 |
FOR RELAY DRIVE POWER SUPPLY APPLICAITON SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 374 |
2SC481 |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
| 375 |
2SC502 |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
| 376 |
2SC5209 |
FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 377 |
2SC520A |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
| 378 |
2SC521A |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
| 379 |
336EGW |
5.0MM MULTI COLOR ROUND TYPE LED LAMPS |
Everlight Electronics |
| 380 |
39NQ52C |
Subminiature microwave detection diode, color red |
Tesla Elektronicke |
| 381 |
3B17-CUSTOM |
Non-Isolated LVDT or RVDT Input Signal Conditioning Module |
Analog Devices |
| 382 |
3N159 |
MOS Field-Effect Transistor N-Channel Depletion Type, for RF up to 300MHz |
RCA Solid State |
| 383 |
4-AAZ10 |
Germanium diode quartet for ring modulators |
TUNGSRAM |
| 384 |
4-OA1154Q |
Germanium tip diode quartet for ring modulators |
TUNGSRAM |
| 385 |
40468A |
MOS Field-Effect Transistor N-Channel Depletion Type, for RF Amplifier and Mixer Applications in FM and AM/FM receivers |
RCA Solid State |
| 386 |
40559A |
MOS Field-Effect Transistor N-Channel Depletion Type, for RF Amplifier and Mixer Applications in FM and AM/FM receivers |
RCA Solid State |
| 387 |
40820 |
Silicon Dual Insulated-Gate Field-Effect N-Channel Transistor for RF amplifier |
RCA Solid State |
| 388 |
40822 |
Silicon Dual Insulated-Gate Field-Effect N-Channel Transistor, for RF amplifiers |
RCA Solid State |
| 389 |
41044 |
0.4W 4.36GHz Oscillator RF Silicon NPN Transistor |
RCA Solid State |
| 390 |
5962-8868503HA |
SINGLE SUPPLY VOLTAGE SUPERVISOR ROR 5V SYSTEMS WITH PROGRAMMABLE TIME DELAY |
Texas Instruments |
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