| No. |
Part Name |
Description |
Manufacturer |
| 361 |
2SC2531 |
Silicon NPN epitaxial planar transistor, 2-30MH SSB linear power amplifier applications 28V supply voltage use |
TOSHIBA |
| 362 |
2SC2532 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Driver Stage for LED Lamp Applications Temperature Compensation Applications |
TOSHIBA |
| 363 |
2SC2538 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 364 |
2SC2539 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 365 |
2SC2540 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 366 |
2SC2543 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 367 |
2SC2544 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 368 |
2SC2545 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 369 |
2SC2546 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 370 |
2SC2547 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 371 |
2SC2550 |
Silicon NPN Epitaxial type transistor (PCT Process) for industrial applications |
TOSHIBA |
| 372 |
2SC2551 |
Transistor Silicon NPN Epitaxial Type (PCT process) Hight Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications |
TOSHIBA |
| 373 |
2SC2561 |
Si NPN epitaxial planar. RF amplifier. |
Panasonic |
| 374 |
2SC2562 |
Silicon NPN epitaxial high-current switching transistor |
TOSHIBA |
| 375 |
2SC2563 |
Silicon NPN epitaxial audio frequency power transistor |
TOSHIBA |
| 376 |
2SC2564 |
Silicon NPN epitaxial power transistor, complementary to 2SA1094 |
TOSHIBA |
| 377 |
2SC2565 |
Silicon NPN epitaxial power transistor, complementary to 2SA1095 |
TOSHIBA |
| 378 |
2SC2591 |
Transistor - Silicon NPN Epitaxial Planar Type |
Panasonic |
| 379 |
2SC2592 |
Transistor - Silicon NPN Epitaxial Planar Type |
Panasonic |
| 380 |
2SC2609 |
NPN epitaxial planar RF power VHF transistor 100W 28V |
Mitsubishi Electric Corporation |
| 381 |
2SC2618 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 382 |
2SC2619 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 383 |
2SC2620 |
Silicon NPN Epitaxial Planar |
Hitachi Semiconductor |
| 384 |
2SC2633 |
Transistor - Silicon NPN Epitaxial Planar Type |
Panasonic |
| 385 |
2SC2644 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Wideband Amplifier Applications (fT=4GHz) |
TOSHIBA |
| 386 |
2SC2652 |
V(cbo): 85V; V(ces): 85V; V(ceo): 55V; V(ebo): 4V; 20A; 300W; silicon NPN epitaxial planar transistor. For 2-30 MHz SSB linear power amplifier applications |
TOSHIBA |
| 387 |
2SC2655 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 388 |
2SC2668 |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications FM, RF, IF Amplifier Applications |
TOSHIBA |
| 389 |
2SC2669 |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications |
TOSHIBA |
| 390 |
2SC2670 |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications |
TOSHIBA |
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