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Datasheets for R30

Datasheets found :: 2978
Page: | 9 | 10 | 11 | 12 | 13 | 14 | 15 | 16 | 17 |
No. Part Name Description Manufacturer
361 APR3023-30BI-TR 3.08 V, micropower microprocessor reset circuit ANPEC Electronics Corporation
362 APR3023-39AC-TR 3.9 V, micropower microprocessor reset circuit ANPEC Electronics Corporation
363 APR3023-39AI-TR 3.9 V, micropower microprocessor reset circuit ANPEC Electronics Corporation
364 APR3023-39BC-TR 3.9 V, micropower microprocessor reset circuit ANPEC Electronics Corporation
365 APR3023-39BI-TR 3.9 V, micropower microprocessor reset circuit ANPEC Electronics Corporation
366 APR3023-43AC-TR 4.38 V, micropower microprocessor reset circuit ANPEC Electronics Corporation
367 APR3023-43AI-TR 4.38 V, micropower microprocessor reset circuit ANPEC Electronics Corporation
368 APR3023-43BC-TR 4.38 V, micropower microprocessor reset circuit ANPEC Electronics Corporation
369 APR3023-43BI-TR 4.38 V, micropower microprocessor reset circuit ANPEC Electronics Corporation
370 AR3001LTS10 1000 V, 5835 A, 50.4 kA rectifier diode POSEICO SPA
371 AR3001S10 1000 V, 4655 A, 44.8 kA rectifier diode POSEICO SPA
372 AR3004S26 2600 V, 3345 A, 35.3 kA rectifier diode POSEICO SPA
373 AR3007S30 3000 V, 2300 A, 30.2 kA rectifier diode POSEICO SPA
374 AR3008S30 3000 V, 2700 A, 30.2 kA rectifier diode POSEICO SPA
375 AR302S08 800 V, 1570 A, 16 kA rectifier diode POSEICO SPA
376 AUR300 NPN SILICON RF POWER TRANSISTOR Advanced Semiconductor
377 BCR30 MEDIUM POWER USE INSULATED TYPE/ GLASS PASSIVATION TYPE Mitsubishi Electric Corporation
378 BCR30AM MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
379 BCR30AM Triac 30 Ampere/400-600 Volts Powerex Power Semiconductors
380 BCR30AM-12 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
381 BCR30AM-12 Triac 30 Ampere/400-600 Volts Powerex Power Semiconductors
382 BCR30AM-12L Triac 30 Ampere/400-600 Volts Powerex Power Semiconductors
383 BCR30AM-8 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
384 BCR30AM-8 Triac 30 Ampere/400-600 Volts Powerex Power Semiconductors
385 BCR30AM-8L Triac 30 Ampere/400-600 Volts Powerex Power Semiconductors
386 BCR30GM MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE Mitsubishi Electric Corporation
387 BFR30 Field effect transistor mble
388 BFR30 JFET amplifier N-Channel, marking M1 Motorola
389 BFR30 N channel junction field effect transistor Mullard
390 BFR30 N-channel FET NXP Semiconductors


Datasheets found :: 2978
Page: | 9 | 10 | 11 | 12 | 13 | 14 | 15 | 16 | 17 |



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