| No. |
Part Name |
Description |
Manufacturer |
| 361 |
APR3023-30BI-TR |
3.08 V, micropower microprocessor reset circuit |
ANPEC Electronics Corporation |
| 362 |
APR3023-39AC-TR |
3.9 V, micropower microprocessor reset circuit |
ANPEC Electronics Corporation |
| 363 |
APR3023-39AI-TR |
3.9 V, micropower microprocessor reset circuit |
ANPEC Electronics Corporation |
| 364 |
APR3023-39BC-TR |
3.9 V, micropower microprocessor reset circuit |
ANPEC Electronics Corporation |
| 365 |
APR3023-39BI-TR |
3.9 V, micropower microprocessor reset circuit |
ANPEC Electronics Corporation |
| 366 |
APR3023-43AC-TR |
4.38 V, micropower microprocessor reset circuit |
ANPEC Electronics Corporation |
| 367 |
APR3023-43AI-TR |
4.38 V, micropower microprocessor reset circuit |
ANPEC Electronics Corporation |
| 368 |
APR3023-43BC-TR |
4.38 V, micropower microprocessor reset circuit |
ANPEC Electronics Corporation |
| 369 |
APR3023-43BI-TR |
4.38 V, micropower microprocessor reset circuit |
ANPEC Electronics Corporation |
| 370 |
AR3001LTS10 |
1000 V, 5835 A, 50.4 kA rectifier diode |
POSEICO SPA |
| 371 |
AR3001S10 |
1000 V, 4655 A, 44.8 kA rectifier diode |
POSEICO SPA |
| 372 |
AR3004S26 |
2600 V, 3345 A, 35.3 kA rectifier diode |
POSEICO SPA |
| 373 |
AR3007S30 |
3000 V, 2300 A, 30.2 kA rectifier diode |
POSEICO SPA |
| 374 |
AR3008S30 |
3000 V, 2700 A, 30.2 kA rectifier diode |
POSEICO SPA |
| 375 |
AR302S08 |
800 V, 1570 A, 16 kA rectifier diode |
POSEICO SPA |
| 376 |
AUR300 |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 377 |
BCR30 |
MEDIUM POWER USE INSULATED TYPE/ GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 378 |
BCR30AM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 379 |
BCR30AM |
Triac 30 Ampere/400-600 Volts |
Powerex Power Semiconductors |
| 380 |
BCR30AM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 381 |
BCR30AM-12 |
Triac 30 Ampere/400-600 Volts |
Powerex Power Semiconductors |
| 382 |
BCR30AM-12L |
Triac 30 Ampere/400-600 Volts |
Powerex Power Semiconductors |
| 383 |
BCR30AM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 384 |
BCR30AM-8 |
Triac 30 Ampere/400-600 Volts |
Powerex Power Semiconductors |
| 385 |
BCR30AM-8L |
Triac 30 Ampere/400-600 Volts |
Powerex Power Semiconductors |
| 386 |
BCR30GM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 387 |
BFR30 |
Field effect transistor |
mble |
| 388 |
BFR30 |
JFET amplifier N-Channel, marking M1 |
Motorola |
| 389 |
BFR30 |
N channel junction field effect transistor |
Mullard |
| 390 |
BFR30 |
N-channel FET |
NXP Semiconductors |
| | | |
