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Datasheets for RIOD

Datasheets found :: 1977
Page: | 9 | 10 | 11 | 12 | 13 | 14 | 15 | 16 | 17 |
No. Part Name Description Manufacturer
361 KM416C254DT-5 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, 8ms refresh period Samsung Electronic
362 KM416C254DT-6 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, 8ms refresh period Samsung Electronic
363 KM416C254DT-7 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, 8ms refresh period Samsung Electronic
364 KM416V1004CJ-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64ms Samsung Electronic
365 KM416V1004CJ-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64ms Samsung Electronic
366 KM416V1004CJ-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=64ms Samsung Electronic
367 KM416V1004CT-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64ms Samsung Electronic
368 KM416V1004CT-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64ms Samsung Electronic
369 KM416V1004CT-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=64ms Samsung Electronic
370 KM416V1204CJ-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=16ms Samsung Electronic
371 KM416V1204CJ-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=16ms Samsung Electronic
372 KM416V1204CJ-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=16ms Samsung Electronic
373 KM416V1204CT-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=16ms Samsung Electronic
374 KM416V1204CT-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=16ms Samsung Electronic
375 KM416V1204CT-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=16ms Samsung Electronic
376 KM416V254DJ-5 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, 8ms refresh period Samsung Electronic
377 KM416V254DJ-6 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, 8ms refresh period Samsung Electronic
378 KM416V254DJ-7 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, 8ms refresh period Samsung Electronic
379 KM416V254DT-5 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, 8ms refresh period Samsung Electronic
380 KM416V254DT-6 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, 8ms refresh period Samsung Electronic
381 KM416V254DT-7 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, 8ms refresh period Samsung Electronic
382 LPDA-8003 LPDA-8003 Log Periodic Dipole Antenna TDK Semiconductor
383 MAC20A Silicon Bidirectional Triode Thyristors Motorola
384 MAC224-10 TRIACS SILICON BIDIRECTIONAL 40 AMPERES RMS TRIODE THYRISTORS New Jersey Semiconductor
385 MAC224-4 TRIACS SILICON BIDIRECTIONAL 40 AMPERES RMS TRIODE THYRISTORS New Jersey Semiconductor
386 MAC224-6 TRIACS SILICON BIDIRECTIONAL 40 AMPERES RMS TRIODE THYRISTORS New Jersey Semiconductor
387 MAC224-8 TRIACS SILICON BIDIRECTIONAL 40 AMPERES RMS TRIODE THYRISTORS New Jersey Semiconductor
388 MAC228-10 TRIAC SILICON BIDIRECTIONAL TRIODE THYRISTORS New Jersey Semiconductor
389 MAC228-4 TRIAC SILICON BIDIRECTIONAL TRIODE THYRISTORS New Jersey Semiconductor
390 MAC228-6 TRIAC SILICON BIDIRECTIONAL TRIODE THYRISTORS New Jersey Semiconductor


Datasheets found :: 1977
Page: | 9 | 10 | 11 | 12 | 13 | 14 | 15 | 16 | 17 |



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