| No. |
Part Name |
Description |
Manufacturer |
| 361 |
BC846ALT1-D |
General Purpose Transistors NPN Silicon |
ON Semiconductor |
| 362 |
BC846AWT1-D |
General Purpose Transistors NPN Silicon |
ON Semiconductor |
| 363 |
BC846BDW1T1-D |
Dual General Purpose Transistors NPN Duals |
ON Semiconductor |
| 364 |
BC846BPDW1T1-D |
Dual General Purpose Transistors NPN/PNP Duals (Complimentary) |
ON Semiconductor |
| 365 |
BC847BTT1-D |
General Purpose Transistors NPN Silicon |
ON Semiconductor |
| 366 |
BCW32LT1-D |
General Purpose Transistors NPN Silicon |
ON Semiconductor |
| 367 |
BCW33LT1-D |
General Purpose Transistors NPN Silicon |
ON Semiconductor |
| 368 |
BCW65ALT1-D |
General Purpose Transistors NPN Silicon |
ON Semiconductor |
| 369 |
BCW72LT1-D |
General Purpose Transistors NPN Silicon |
ON Semiconductor |
| 370 |
BCX70GLT1-D |
General Purpose Transistors NPN Silicon |
ON Semiconductor |
| 371 |
BCY70 |
PNP Silicon Planar Transistor for low-level audio applications |
Newmarket Transistors NKT |
| 372 |
BCY71 |
PNP Silicon Planar Transistor for low-level audio applications |
Newmarket Transistors NKT |
| 373 |
BCY72 |
PNP Silicon Planar Transistor for low-level audio applications |
Newmarket Transistors NKT |
| 374 |
BD137 |
hfe min 40 Transistor polarity NPN Current Ic continuous max 1 A Voltage Vceo 60 V Current Ic (hfe) 0.15 A Power Ptot 12.5 W Temperature power 25 ?C Transistors number of 1 |
SGS Thomson Microelectronics |
| 375 |
BD179-10 |
POWER TRANSISTORS NPN SILICON |
ON Semiconductor |
| 376 |
BD67 |
DARLINGTON POWER TRANSISTORS NPN SILICON |
ON Semiconductor |
| 377 |
BDY20 |
NPN Silicon Power Transistor for audio amplifiers and switching applications |
Newmarket Transistors NKT |
| 378 |
BF1005 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 379 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 380 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
| 381 |
BF1009S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
| 382 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
| 383 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 384 |
BF245A-D |
JFET VHF/UHF Amplifiers N-Channel - Depletion |
ON Semiconductor |
| 385 |
BF420-D |
High Voltage Transistors NPN Silicon |
ON Semiconductor |
| 386 |
BFR30LT1-D |
JFET Amplifiers N-Channel |
ON Semiconductor |
| 387 |
BFR92ALT1 |
RF TRANSISTORS NPN SILICON |
Motorola |
| 388 |
BFR93ALT1 |
RF TRANSISTORS NPN SILICON |
Motorola |
| 389 |
BFX29 |
PNP Silicon Planar Transistor for medium level switching |
Newmarket Transistors NKT |
| 390 |
BFX30 |
PNP Silicon Planar Transistor for medium level switching |
Newmarket Transistors NKT |
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