| No. |
Part Name |
Description |
Manufacturer |
| 361 |
1S2577 |
Silicon diffused junction rectifier 1A 200V |
TOSHIBA |
| 362 |
1S2578 |
Silicon diffused junction rectifier 1A 400V |
TOSHIBA |
| 363 |
1S2579 |
Silicon diffused junction rectifier 1A 600V |
TOSHIBA |
| 364 |
1S2580 |
Silicon diffused junction rectifier 1A 800V |
TOSHIBA |
| 365 |
1S2581 |
Silicon diffused junction rectifier 1A 1000V |
TOSHIBA |
| 366 |
1S2582 |
Silicon diffused junction rectifier 3A 100V |
TOSHIBA |
| 367 |
1S2583 |
Silicon diffused junction rectifier 3A 200V |
TOSHIBA |
| 368 |
1S2584 |
Silicon diffused junction rectifier 3A 400V |
TOSHIBA |
| 369 |
1S2585 |
Silicon diffused junction rectifier 3A 600V |
TOSHIBA |
| 370 |
1S2586 |
Silicon diffused junction rectifier 3A 800V |
TOSHIBA |
| 371 |
1S2615 |
Silicon diffused junction fast recovery rectifier |
TOSHIBA |
| 372 |
1S2616 |
Silicon diffused junction fast recovery rectifier |
TOSHIBA |
| 373 |
1S2617 |
Silicon diffused junction fast recovery rectifier |
TOSHIBA |
| 374 |
1S310 |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 375 |
1S310H |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 376 |
1S311 |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 377 |
1S311H |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 378 |
1S312 |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 379 |
1S312H |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 380 |
1S313 |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 381 |
1S313H |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 382 |
1S314 |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 383 |
1S314H |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 384 |
1S315 |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 385 |
1S315H |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 386 |
1S756H |
Silicon Difused Junction, Zener Diode Vz=5.2...6.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 387 |
1S757H |
Silicon Difused Junction, Zener Diode Vz=6.2...8.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 388 |
1S758H |
Silicon Difused Junction, Zener Diode Vz=7.5...10.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 389 |
1S759H |
Silicon Difused Junction, Zener Diode Vz=9.0...12.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 390 |
1S760H |
Silicon Difused Junction, Zener Diode Vz=11.0...14.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
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