| No. |
Part Name |
Description |
Manufacturer |
| 361 |
1N824UR-1e3 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 362 |
1N825 |
TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Compensated Devices Incorporated |
| 363 |
1N825 |
Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching |
SESCOSEM |
| 364 |
1N825 |
Silicon Voltage Reference Diode temperature compensated 6.2V, Military Version USN/JAN |
Transitron Electronic |
| 365 |
1N825-1 |
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Microsemi |
| 366 |
1N825-1E3 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 367 |
1N825A |
Leaded Zener Diode Temperature Compensated |
Central Semiconductor |
| 368 |
1N825A |
TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Compensated Devices Incorporated |
| 369 |
1N825A |
Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching |
SESCOSEM |
| 370 |
1N825A |
Silicon Voltage Reference Diode temperature compensated 6.2V |
Transitron Electronic |
| 371 |
1N825A-1 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 372 |
1N825A-1E3 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 373 |
1N825AUR-1E3 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 374 |
1N825UR |
6.2 & 6.55 Volt Temperature Compensated Surface Mount Zener Reference Diodes |
Microsemi |
| 375 |
1N825UR-1E3 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 376 |
1N826 |
TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Compensated Devices Incorporated |
| 377 |
1N826-1 |
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Microsemi |
| 378 |
1N826-1e3 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 379 |
1N826A |
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Microsemi |
| 380 |
1N826UR |
6.2 & 6.55 Volt Temperature Compensated Surface Mount Zener Reference Diodes |
Microsemi |
| 381 |
1N826UR-1 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 382 |
1N826UR-1e3 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 383 |
1N827 |
TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Compensated Devices Incorporated |
| 384 |
1N827 |
Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching |
SESCOSEM |
| 385 |
1N827 |
Silicon Voltage Reference Diode temperature compensated 6.2V, Military Version USN/JAN |
Transitron Electronic |
| 386 |
1N827-1 |
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Microsemi |
| 387 |
1N827-1E3 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 388 |
1N827A |
Leaded Zener Diode Temperature Compensated |
Central Semiconductor |
| 389 |
1N827A |
TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Compensated Devices Incorporated |
| 390 |
1N827A |
Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching |
SESCOSEM |
| | | |
