| No. |
Part Name |
Description |
Manufacturer |
| 361 |
3N157A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 362 |
3N158 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 363 |
3N158A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 364 |
3N160 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 365 |
3N161 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 366 |
3N163 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 367 |
3N164 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 368 |
3N169 |
N-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 369 |
3N170 |
N-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 370 |
3N171 |
N-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 371 |
3N174 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 372 |
3N187 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
| 373 |
3N187 |
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR |
Vaishali Semiconductor |
| 374 |
3N200 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
| 375 |
3N200 |
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR |
Intersil |
| 376 |
3N201 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 377 |
3N202 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 378 |
3N203 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 379 |
3N204 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
| 380 |
3N204 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 381 |
3N205 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
| 382 |
3N205 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 383 |
3N206 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
| 384 |
3N206 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 385 |
3N207 |
Dual P-Channel Enhancement-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 386 |
3N208 |
Dual P-Channel Enhancement-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 387 |
3N211 |
N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 388 |
3N212 |
N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 389 |
3N213 |
N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 390 |
3N214 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
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