No. |
Part Name |
Description |
Manufacturer |
361 |
EL2227CY-T7 |
Dual Very Low Noise Amplifier |
Elantec Semiconductor |
362 |
EL2227CY-T7 |
Dual Very Low Noise Amplifier |
Intersil |
363 |
ERC |
Military/Established Reliability, MIL-R-55182 Qualified, Type RNC, Very Low Noise, Verified Failure Rate, 100% Stabilization and Screening Tests, Controlled Temperature Coefficient |
Vishay |
364 |
ERL |
Military/Established Reliability, MIL-PRF-39017 Qualified, Type RLR, Verified Failure Rate, Excellent High Frequency Performance, Epoxy Coating Provides Superior Moisture Protection, Monthly Lot Acceptance Testing, Very Low Noise |
Vishay |
365 |
HS-OP470AEH |
Radiation Hardened, Very Low Noise Quad Operational Amplifier |
Intersil |
366 |
HS-OP470AR |
Radiation Hardened/ Very Low Noise Quad Operational Amplifier |
Intersil |
367 |
HS9-OP470ARH |
Radiation Hardened/ Very Low Noise Quad Operational Amplifier |
Intersil |
368 |
HS9-OP470ARH-Q |
Radiation Hardened/ Very Low Noise Quad Operational Amplifier |
Intersil |
369 |
KSA1174 |
PNP (AUDIO FREQUENCY LOW NOISE AMPLIFIER) |
Samsung Electronic |
370 |
KSC1222 |
NPN (LOW FREQUENCY LOW NOISE AMPLIFIER) |
Samsung Electronic |
371 |
KSC1845 |
NPN (AUDIO FREQUENCY LOW NOISE AMPLIFIER) |
Samsung Electronic |
372 |
KSC2784 |
NPN (AUDIO FREQUENCY LOW NOISE AMPLIFIER) |
Samsung Electronic |
373 |
KSK117 |
N-CHANNEL JUNCTION FET (LOW FREQUENCY LOW NOISE AMP.) |
Samsung Electronic |
374 |
KTC3878 |
EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY LOW NOISE AMPLIFIER/ HF/ VHF AMPLIFIER) |
Korea Electronics (KEC) |
375 |
KTC3880 |
EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY LOW NOISE AMPLIFIER/ VHF BAND AMPLIFIER) |
Korea Electronics (KEC) |
376 |
LDK120 |
200 mA low quiescent current very low noise LDO |
ST Microelectronics |
377 |
LDK120C-R |
200 mA low quiescent current very low noise LDO |
ST Microelectronics |
378 |
LDK120C08R |
200 mA low quiescent current very low noise LDO |
ST Microelectronics |
379 |
LDK120C10R |
200 mA low quiescent current very low noise LDO |
ST Microelectronics |
380 |
LDK120C11R |
200 mA low quiescent current very low noise LDO |
ST Microelectronics |
381 |
LDK120C12R |
200 mA low quiescent current very low noise LDO |
ST Microelectronics |
382 |
LDK120C15R |
200 mA low quiescent current very low noise LDO |
ST Microelectronics |
383 |
LDK120C18R |
200 mA low quiescent current very low noise LDO |
ST Microelectronics |
384 |
LDK120C25R |
200 mA low quiescent current very low noise LDO |
ST Microelectronics |
385 |
LDK120C28R |
200 mA low quiescent current very low noise LDO |
ST Microelectronics |
386 |
LDK120C29R |
200 mA low quiescent current very low noise LDO |
ST Microelectronics |
387 |
LDK120C30R |
200 mA low quiescent current very low noise LDO |
ST Microelectronics |
388 |
LDK120C31R |
200 mA low quiescent current very low noise LDO |
ST Microelectronics |
389 |
LDK120C32R |
200 mA low quiescent current very low noise LDO |
ST Microelectronics |
390 |
LDK120C33R |
200 mA low quiescent current very low noise LDO |
ST Microelectronics |
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