| No. |
Part Name |
Description |
Manufacturer |
| 3631 |
EL5135IW-T7A |
630MHz, Gain of 5, Low Noise Amplifiers |
Intersil |
| 3632 |
EL5234 |
Dual, 630MHz, Low Noise Amplifier with Enable |
Intersil |
| 3633 |
EL5234IY |
630MHz, Gain of 5, Low Noise Amplifiers |
Intersil |
| 3634 |
EL5234IY-T13 |
630MHz, Gain of 5, Low Noise Amplifiers |
Intersil |
| 3635 |
EL5234IY-T7 |
630MHz, Gain of 5, Low Noise Amplifiers |
Intersil |
| 3636 |
EL5235 |
Dual, 630MHz, Low Noise Amplifier |
Intersil |
| 3637 |
EL5235IS |
630MHz, Gain of 5, Low Noise Amplifiers |
Intersil |
| 3638 |
EL5235IS-T13 |
630MHz, Gain of 5, Low Noise Amplifiers |
Intersil |
| 3639 |
EL5235IS-T7 |
630MHz, Gain of 5, Low Noise Amplifiers |
Intersil |
| 3640 |
EL5236 |
Dual Ultra Low Noise Wideband Amplifiers |
Intersil |
| 3641 |
EL5237 |
Dual Ultra Low Noise Wideband Amplifiers |
Intersil |
| 3642 |
EL6259 |
Low Noise 4-Channel Laser Diode Driver + Oscillator |
Elantec Semiconductor |
| 3643 |
EL6259C |
Low Noise 4-Channel Laser Diode Driver + Oscillator |
Elantec Semiconductor |
| 3644 |
EL6259CU |
Low Noise 4-Channel Laser Diode Driver + Oscillator |
Elantec Semiconductor |
| 3645 |
EMA205B |
9-16 GHz low noise MMIC |
Excelics Semiconductor |
| 3646 |
EMA406C |
26-32 GHz low noise MMIC |
Excelics Semiconductor |
| 3647 |
EPB018A5 |
Super Low Noise High Gain Heterojunction FET |
Eon Silicon Solution |
| 3648 |
EPB018A5 |
4-5V high super low noise high gain heterojunction power FET |
Excelics Semiconductor |
| 3649 |
EPB018A5-70 |
Super Low Noise High Gain Heterojunction FET |
Eon Silicon Solution |
| 3650 |
EPB018A5-70 |
4-5V high super low noise high gain heterojunction power FET |
Excelics Semiconductor |
| 3651 |
EPB018A7 |
4-5V high super low noise high gain heterojunction power FET |
Excelics Semiconductor |
| 3652 |
EPB018A7-70 |
Super Low Noise High Gain Heterojunction FET |
Eon Silicon Solution |
| 3653 |
EPB018A7-70 |
4-5V high super low noise high gain heterojunction power FET |
Excelics Semiconductor |
| 3654 |
EPB018A9 |
4-5V high super low noise high gain heterojunction power FET |
Excelics Semiconductor |
| 3655 |
EPB018A9-70 |
Super Low Noise High Gain Heterojunction FET |
Eon Silicon Solution |
| 3656 |
EPB018A9-70 |
4-5V high super low noise high gain heterojunction power FET |
Excelics Semiconductor |
| 3657 |
EPB025A |
3-5V high super low noise high gain heterojunction power FET |
Excelics Semiconductor |
| 3658 |
EPB025A-70 |
3-5V low noise high gain heterojunction power FET |
Excelics Semiconductor |
| 3659 |
ERC |
Military/Established Reliability, MIL-R-55182 Qualified, Type RNC, Very Low Noise, Verified Failure Rate, 100% Stabilization and Screening Tests, Controlled Temperature Coefficient |
Vishay |
| 3660 |
ERL |
Military/Established Reliability, MIL-PRF-39017 Qualified, Type RLR, Verified Failure Rate, Excellent High Frequency Performance, Epoxy Coating Provides Superior Moisture Protection, Monthly Lot Acceptance Testing, Very Low Noise |
Vishay |
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