No. |
Part Name |
Description |
Manufacturer |
3631 |
MAS9275B3SM06 |
IC FOR 10.00 - 36.00 MHz VCXO |
etc |
3632 |
MAS9275B3SM06 |
IC FOR 10.00 - 36.00 MHz VCXO |
etc |
3633 |
MAS9275B3TG00 |
IC FOR 10.00 - 36.00 MHz VCXO |
etc |
3634 |
MAS9275B3TG00 |
IC FOR 10.00 - 36.00 MHz VCXO |
etc |
3635 |
MAS9275C2SM06 |
IC FOR 10.00 - 36.00 MHz VCXO |
etc |
3636 |
MAS9275C2SM06 |
IC FOR 10.00 - 36.00 MHz VCXO |
etc |
3637 |
MAS9275C2TG00 |
IC FOR 10.00 - 36.00 MHz VCXO |
etc |
3638 |
MAS9275C2TG00 |
IC FOR 10.00 - 36.00 MHz VCXO |
etc |
3639 |
MAS9275C3SM06 |
IC FOR 10.00 - 36.00 MHz VCXO |
etc |
3640 |
MAS9275C3SM06 |
IC FOR 10.00 - 36.00 MHz VCXO |
etc |
3641 |
MAS9275C3TG00 |
IC FOR 10.00 - 36.00 MHz VCXO |
etc |
3642 |
MAS9275C3TG00 |
IC FOR 10.00 - 36.00 MHz VCXO |
etc |
3643 |
MAS9275C4SM06 |
IC FOR 10.00 - 36.00 MHz VCXO |
etc |
3644 |
MAS9275C4SM06 |
IC FOR 10.00 - 36.00 MHz VCXO |
etc |
3645 |
MAS9275C4TG00 |
IC FOR 10.00 - 36.00 MHz VCXO |
etc |
3646 |
MAS9275C4TG00 |
IC FOR 10.00 - 36.00 MHz VCXO |
etc |
3647 |
MAX20-100.0C |
100.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
3648 |
MAX20-100.0CA |
100.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
3649 |
MAX20-110.0C |
110.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
3650 |
MAX20-110.0CA |
110.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
3651 |
MAX20-120.0C |
120.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
3652 |
MAX20-120.0CA |
120.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
3653 |
MAX20-130.0C |
130.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
3654 |
MAX20-130.0CA |
130.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
3655 |
MAX20-150.0C |
150.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
3656 |
MAX20-150.0CA |
150.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
3657 |
MAX40-100.0C |
100.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
3658 |
MAX40-100.0CA |
100.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
3659 |
MAX40-110.0C |
110.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
3660 |
MAX40-110.0CA |
110.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
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