No. |
Part Name |
Description |
Manufacturer |
3631 |
ISR2805DDRH |
5V, Radiation hardened high-power, high efficiency DC-DC power converter |
M.S. Kennedy Corp. |
3632 |
ISR2805DEDRH |
5V, Radiation hardened high-power, high efficiency DC-DC power converter |
M.S. Kennedy Corp. |
3633 |
ISR2805DESRH |
5V, Radiation hardened high-power, high efficiency DC-DC power converter |
M.S. Kennedy Corp. |
3634 |
ISR2805DEURH |
5V, Radiation hardened high-power, high efficiency DC-DC power converter |
M.S. Kennedy Corp. |
3635 |
ISR2805DHDRH |
5V, Radiation hardened high-power, high efficiency DC-DC power converter |
M.S. Kennedy Corp. |
3636 |
ISR2805DHSRH |
5V, Radiation hardened high-power, high efficiency DC-DC power converter |
M.S. Kennedy Corp. |
3637 |
ISR2805DHURH |
5V, Radiation hardened high-power, high efficiency DC-DC power converter |
M.S. Kennedy Corp. |
3638 |
ISR2805DKDRH |
5V, Radiation hardened high-power, high efficiency DC-DC power converter |
M.S. Kennedy Corp. |
3639 |
ISR2805DKSRH |
5V, Radiation hardened high-power, high efficiency DC-DC power converter |
M.S. Kennedy Corp. |
3640 |
ISR2805DKURH |
5V, Radiation hardened high-power, high efficiency DC-DC power converter |
M.S. Kennedy Corp. |
3641 |
ISR2805DSRH |
5V, Radiation hardened high-power, high efficiency DC-DC power converter |
M.S. Kennedy Corp. |
3642 |
ISR2805DURH |
5V, Radiation hardened high-power, high efficiency DC-DC power converter |
M.S. Kennedy Corp. |
3643 |
JANSF2N7480U3 |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
International Rectifier |
3644 |
JANSG2N7480U3 |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
International Rectifier |
3645 |
JANSH2N7480U3 |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
International Rectifier |
3646 |
JANSR2N7281 |
Radiation Hardened/ N-Channel Power MOSFET |
Intersil |
3647 |
JANSR2N7407 |
Formerly Available As FSF254R4/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
3648 |
JANSR2N7408 |
Formerly Available As FSF450R4/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
3649 |
JANSR2N7438 |
Formerly Available As FSL913A0R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
Intersil |
3650 |
JANSR2N7439 |
Formerly Available As FSL923A0R4/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
3651 |
JANSR2N7440 |
Formerly Available as FSS913A0R4/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
3652 |
JANSR2N7480U3 |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
International Rectifier |
3653 |
JANSR2N7498T2 |
RADIATION HARDENED POWER MOSFET THRU-HOLE ( TO-39) |
International Rectifier |
3654 |
JM38510/13503BPA |
Low-Noise Precision High-Speed Operational Amplifier |
Texas Instruments |
3655 |
JM38510/13506BPA |
Low-Noise Precision High-Speed Operational Amplifier 8-CDIP -55 to 125 |
Texas Instruments |
3656 |
KSV1401 |
SILICON HYPERABRUPT TUNING DIODES |
Knox Semiconductor Inc |
3657 |
KSV1402 |
SILICON HYPERABRUPT TUNING DIODES |
Knox Semiconductor Inc |
3658 |
KSV1403 |
SILICON HYPERABRUPT TUNING DIODES |
Knox Semiconductor Inc |
3659 |
KSV1404 |
SILICON HYPERABRUPT TUNING DIODES |
Knox Semiconductor Inc |
3660 |
KSV1405 |
SILICON HYPERABRUPT TUNING DIODES |
Knox Semiconductor Inc |
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