| No. |
Part Name |
Description |
Manufacturer |
| 3631 |
AM27S31/BJA |
(512X8) Bipolar PROM |
Advanced Micro Devices |
| 3632 |
AM27S31/BKA |
(512X8) Bipolar PROM |
Advanced Micro Devices |
| 3633 |
AM27S31/BUA |
(512X8) Bipolar PROM |
Advanced Micro Devices |
| 3634 |
AM27S31A |
(512X8) Bipolar PROM |
Advanced Micro Devices |
| 3635 |
AM27S31A/B3A |
(512X8) Bipolar PROM |
Advanced Micro Devices |
| 3636 |
AM27S31A/BJA |
(512X8) Bipolar PROM |
Advanced Micro Devices |
| 3637 |
AM27S31A/BKA |
(512X8) Bipolar PROM |
Advanced Micro Devices |
| 3638 |
AM27S31A/BUA |
(512X8) Bipolar PROM |
Advanced Micro Devices |
| 3639 |
AM29116 |
High Performance 16 Bit Bipolar Microprocessor |
Advanced Micro Devices |
| 3640 |
AM29117 |
High Performance 16 Bit Bipolar Microprocessor |
Advanced Micro Devices |
| 3641 |
AM2931-125 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 3642 |
AM3135-007 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 3643 |
AM3135-014 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 3644 |
AM3135-025 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 3645 |
AM3135-035 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 3646 |
AM3135-045 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 3647 |
AM3135-25N |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 3648 |
AM80610-018 |
High power, common base NPN silicon bipolar device optimized for CW operation in the 620-960MHz |
SGS Thomson Microelectronics |
| 3649 |
AM80610-050 |
High power, common base NPN silicon bipolar device optimized for CW operation in the 750-960MHz |
SGS Thomson Microelectronics |
| 3650 |
AM81416-006 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 3651 |
AM81416-012 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 3652 |
AM81416-020 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 3653 |
AM82223-004 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 3654 |
AM82223-012 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 3655 |
AM82223-014 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 3656 |
AM82223-018 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 3657 |
AM82223-020 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 3658 |
AM82324-020 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz |
SGS Thomson Microelectronics |
| 3659 |
AM82325-040 |
High power silicon NPN bipolar device optimized for specialized pulsed applications in the 2.3-2.5GHz |
SGS Thomson Microelectronics |
| 3660 |
AM82327-004 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
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