No. |
Part Name |
Description |
Manufacturer |
3631 |
2N5962 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
3632 |
2N5963 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
3633 |
2N5968 |
Silicon NPN Power Transistor, TO-63 package |
Silicon Transistor Corporation |
3634 |
2N5995 |
7W, (CW) 175-MHz Silicon NPN Overlay RF Transistor for 12.5 Volt applications in VHF |
RCA Solid State |
3635 |
2N6027 |
Silicon Programmable Unijunction Transistor 40V 300mW |
Motorola |
3636 |
2N6028 |
Silicon Programmable Unijunction Transistor 40V 300mW |
Motorola |
3637 |
2N6029 |
16A power PNP transistor complementary silicon 200W |
Motorola |
3638 |
2N6032 |
NPN power transistor Triple Diffused - Fast switching |
SESCOSEM |
3639 |
2N6032 |
Silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case |
SGS-ATES |
3640 |
2N6032 |
Silicon NPN Power Transistor, TO-3 (cont d) package |
Silicon Transistor Corporation |
3641 |
2N6033 |
NPN power transistor Triple Diffused - Fast switching |
SESCOSEM |
3642 |
2N6033 |
Silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case |
SGS-ATES |
3643 |
2N6033 |
Silicon NPN Power Transistor, TO-3 (cont d) package |
Silicon Transistor Corporation |
3644 |
2N6034 |
Leaded Power Transistor Darlington |
Central Semiconductor |
3645 |
2N6034 |
PNP Power Transistor TO-126 |
National Semiconductor |
3646 |
2N6034 |
PNP silicon power transistor 40W/4A |
National Semiconductor |
3647 |
2N6034 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
3648 |
2N6034 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
3649 |
2N6035 |
Leaded Power Transistor Darlington |
Central Semiconductor |
3650 |
2N6035 |
PNP Power Transistor TO-126 |
National Semiconductor |
3651 |
2N6035 |
PNP silicon power transistor 40W/4A |
National Semiconductor |
3652 |
2N6035 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
3653 |
2N6035 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
3654 |
2N6036 |
Leaded Power Transistor Darlington |
Central Semiconductor |
3655 |
2N6036 |
PNP Power Transistor TO-126 |
National Semiconductor |
3656 |
2N6036 |
PNP silicon power transistor 40W/4A |
National Semiconductor |
3657 |
2N6036 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
3658 |
2N6036 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
3659 |
2N6037 |
Leaded Power Transistor Darlington |
Central Semiconductor |
3660 |
2N6037 |
NPN Power Transistor TO-126 |
National Semiconductor |
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