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Datasheets for =CO

Datasheets found :: 33169
Page: | 119 | 120 | 121 | 122 | 123 | 124 | 125 | 126 | 127 |
No. Part Name Description Manufacturer
3661 80SXE33M Conductive Polymer Aluminum Solid Capacitors (OS-CON) SXE Panasonic
3662 80SXE47M Conductive Polymer Aluminum Solid Capacitors (OS-CON) SXE Panasonic
3663 80SXE56M Conductive Polymer Aluminum Solid Capacitors (OS-CON) SXE Panasonic
3664 80SXV12M Conductive Polymer Aluminum Solid Capacitors (OS-CON) SXV Panasonic
3665 80SXV27M Conductive Polymer Aluminum Solid Capacitors (OS-CON) SXV Panasonic
3666 80SXV27MX Conductive Polymer Aluminum Solid Capacitors (OS-CON) SXV Panasonic
3667 80SXV33M Conductive Polymer Aluminum Solid Capacitors (OS-CON) SXV Panasonic
3668 80SXV47M Conductive Polymer Aluminum Solid Capacitors (OS-CON) SXV Panasonic
3669 80SXV56M Conductive Polymer Aluminum Solid Capacitors (OS-CON) SXV Panasonic
3670 81416-012 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
3671 81416-20 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
3672 81416-6 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
3673 82022-20 Common base NPN silicon power transistor for telemetry applications SGS Thomson Microelectronics
3674 82223-12 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
3675 82223-18 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
3676 82223-20 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
3677 82223-4 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
3678 82324-20 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz SGS Thomson Microelectronics
3679 82327-15 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
3680 82327-4 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
3681 82327-6 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
3682 82C50 Communication Element, UART, Baud Rate Generator, CMOS, 625k Baud, 10MHz Intersil
3683 8300201JA Complete Low Cost Hybrid 12-Bit D/A Converter, -55 to +125°C Analog Devices
3684 8300201JC Complete Low Cost Hybrid 12-Bit D/A Converter, -55 to +125°C Analog Devices
3685 8305 Connector Modules with Intergrated LAN Magnetics FILTRAN
3686 8306 Connector Modules with Intergrated LAN Magnetics FILTRAN
3687 8307 Connector Modules with Intergrated LAN Magnetics FILTRAN
3688 8308 Connector Modules with Intergrated LAN Magnetics FILTRAN
3689 8309 Connector Modules with Intergrated LAN Magnetics FILTRAN
3690 8310 Connector Modules with Intergrated LAN Magnetics FILTRAN


Datasheets found :: 33169
Page: | 119 | 120 | 121 | 122 | 123 | 124 | 125 | 126 | 127 |



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