| No. |
Part Name |
Description |
Manufacturer |
| 3661 |
MCP1252-33X50 |
The MCP1252-33X50 is an inductorless, positive regulating, low noise charge pump DC-to-DC converter. It has selectable outputs of either 3.3V or 5.0V and can deliver 120mA of load current at the selected regulated output voltage. Since the |
Microchip |
| 3662 |
MCP1252-ADJ |
The MCP1252-ADJ is an inductorless, positive regulating, low noise charge pump DC-to-DC converter. It has an adjustable output of either 1.5V to 5.0V and can deliver 120mA of load current at the desired regulated output voltage. Since the |
Microchip |
| 3663 |
MCP1253-33X50 |
The MCP1253-33X50 is an inductorless, positive regulating, low noise charge pump DC-to-DC converter. It has selectable outputs of either 3.3V or 5.0V and can deliver 120mA of load current at the selected regulated output voltage. Since the |
Microchip |
| 3664 |
MCP1253-ADJ |
The MCP1253-ADJ is an inductorless, positive regulating, low noise charge pump DC-to-DC converter. It has an adjustable output of either 1.5V to 5.0V and can deliver 120mA of load current at the desired regulated output voltage. Since the |
Microchip |
| 3665 |
MCP2120 |
The MCP2120 is a low-cost, high-performance, fully-static infrared encoder/decoder. This device sits between a UART and an infrared (IR) optical transceiver The data received from a standard UART is encoded (modulated), and output as elect |
Microchip |
| 3666 |
MFE3001 |
Silicon N-channel insulated-gate field-effect transistor designed for low-power applications in the audio frequency range |
Motorola |
| 3667 |
MG300Q1US11 |
INSULATED GATE BIPOLAR TRANSISTOR |
TOSHIBA |
| 3668 |
MGP11N60E |
Insulated Gate Bipolar Transistor |
Motorola |
| 3669 |
MGP11N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 3670 |
MGP11N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 3671 |
MGP14N60E |
Insulated Gate Bipolar Transistor |
Motorola |
| 3672 |
MGP14N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 3673 |
MGP15N60U |
Insulated Gate Bipolar Transistor |
Motorola |
| 3674 |
MGP15N60U-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 3675 |
MGP20N60U |
Insulated Gate Bipolar Transistor |
Motorola |
| 3676 |
MGP20N60U-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 3677 |
MGP21N60E |
Insulated Gate Bipolar Transistor |
Motorola |
| 3678 |
MGP21N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 3679 |
MGP4N60E |
Insulated Gate Bipolar Transistor |
Motorola |
| 3680 |
MGP4N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 3681 |
MGP4N60ED |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
ON Semiconductor |
| 3682 |
MGP4N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 3683 |
MGP7N60E |
Insulated Gate Bipolar Transistor |
Motorola |
| 3684 |
MGP7N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 3685 |
MGP7N60ED |
Insulated Gate Bipolar Transistor withr Anti-Parallel Diode |
ON Semiconductor |
| 3686 |
MGP7N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 3687 |
MGS05N60D |
Insulated Gate Bipolar Transistor |
Motorola |
| 3688 |
MGS05N60D-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 3689 |
MGS13002D |
Insulated Gate Bipolar Transistor |
Motorola |
| 3690 |
MGS13002D |
Insulated Gate Bipolar Transistor N-Channel |
ON Semiconductor |
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