| No. |
Part Name |
Description |
Manufacturer |
| 3691 |
BAX12 |
Silicon Oxide Passivated Avalanche Diode |
Philips |
| 3692 |
BAX13 |
Silicon Oxide Passivated Diode |
Philips |
| 3693 |
BAX15 |
Silicon Oxide Passivated Diode |
Philips |
| 3694 |
BAX16 |
Silicon Oxide Passivated Diode |
Philips |
| 3695 |
BAX17 |
Silicon Oxide Passivated Diode |
Philips |
| 3696 |
BAX18 |
Silicon Oxide Passivated Diode |
Philips |
| 3697 |
BAX81 |
Glass passivated silicon switching diode of the latest technology for high currents, color code gray-brown-black |
Texas Instruments |
| 3698 |
BAX82 |
Glass passivated silicon switching diode of the latest technology for high currents, color code gray-red-none |
Texas Instruments |
| 3699 |
BAY17 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 3700 |
BAY18 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 3701 |
BAY19 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 3702 |
BAY20 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 3703 |
BAY21 |
Glass Passivated Silicon Diode for general purpose application |
Texas Instruments |
| 3704 |
BBY33BB-2 |
Silicon Tuning Varactor (Tuning varactor in passivated Mesa technology epitaxial design) |
Siemens |
| 3705 |
BTB15-200B |
V(drm): 200V; 15A; triac. For glass passivated chip, Igt specified in four quadrants |
SGS Thomson Microelectronics |
| 3706 |
BTB15-400B |
V(drm): 400V; 15A; triac. For glass passivated chip, Igt specified in four quadrants |
SGS Thomson Microelectronics |
| 3707 |
BTB15-600B |
V(drm): 600V; 15A; triac. For glass passivated chip, Igt specified in four quadrants |
SGS Thomson Microelectronics |
| 3708 |
BTB15-700B |
V(drm): 700V; 15A; triac. For glass passivated chip, Igt specified in four quadrants |
SGS Thomson Microelectronics |
| 3709 |
BTB15-800B |
V(drm): 800V; 15A; triac. For glass passivated chip, Igt specified in four quadrants |
SGS Thomson Microelectronics |
| 3710 |
BTW42-800 |
GLASS PASSIVATED SILICON THYRISTORS |
New Jersey Semiconductor |
| 3711 |
BTW48-200 |
GLASS PASSIVATED SILICON THYRISTORS |
New Jersey Semiconductor |
| 3712 |
BTW48-400 |
GLASS PASSIVATED SILICON THYRISTORS |
New Jersey Semiconductor |
| 3713 |
BTW48-600 |
GLASS PASSIVATED SILICON THYRISTORS |
New Jersey Semiconductor |
| 3714 |
BTW48-800 |
GLASS PASSIVATED SILICON THYRISTORS |
New Jersey Semiconductor |
| 3715 |
BU808 |
8.0A GLASS PASSIVATED BRIDGE RECTIFIER |
Diodes |
| 3716 |
BU808 |
SINGLE PHASE 8.0 AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
| 3717 |
BY126MGP |
MINIATURE GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER |
etc |
| 3718 |
BY126MGP |
650 V, 1.75 A, miniature glass passivated junction plastic rectifier |
General Instruments |
| 3719 |
BY127MGP |
MINIATURE GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER |
etc |
| 3720 |
BY127MGP |
MINIATURE GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER |
etc |
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