No. |
Part Name |
Description |
Manufacturer |
3691 |
NTD2955 |
Power MOSFET 12 A, 60 V P-Channel DPAK |
ON Semiconductor |
3692 |
NTD2955-001 |
Power MOSFET 12 A, 60 V P-Channel DPAK |
ON Semiconductor |
3693 |
NTD2955-1G |
Power MOSFET 12 A, 60 V P-Channel DPAK |
ON Semiconductor |
3694 |
NTD2955D |
Power MOSFET |
ON Semiconductor |
3695 |
NTD2955G |
Power MOSFET 12 A, 60 V P-Channel DPAK |
ON Semiconductor |
3696 |
NTD2955T4 |
Power MOSFET 12 A, 60 V P-Channel DPAK |
ON Semiconductor |
3697 |
NTD2955T4G |
Power MOSFET 12 A, 60 V P-Channel DPAK |
ON Semiconductor |
3698 |
NTE1295 |
Integrated Circuit TV Signal Processor |
NTE Electronics |
3699 |
NTE295 |
Silicon NPN Transistor RF Power Output, Driver |
NTE Electronics |
3700 |
NTE2953 |
MOSFET N-Channel, Enhancement Mode High Speed Switch |
NTE Electronics |
3701 |
NTE2954 |
MOSFET N-Channel, Enhancement Mode High Speed Switch |
NTE Electronics |
3702 |
NTE2955 |
MOSFET N-Channel, Enhancement Mode High Speed Switch |
NTE Electronics |
3703 |
NTE2956 |
MOSFET N-Channel, Enhancement Mode High Speed Switch |
NTE Electronics |
3704 |
NTE2957 |
MOSFET N-Channel, Enhancement Mode High Speed Switch |
NTE Electronics |
3705 |
NTE2958 |
MOSFET N-Channel, Enhancement Mode High Speed Switch |
NTE Electronics |
3706 |
NTE2959 |
MOSFET N-Channel, Enhancement Mode High Speed Switch |
NTE Electronics |
3707 |
NTE5295A |
50 Watt Zener Diodes |
NTE Electronics |
3708 |
NTE5295AK |
50 watt zener diode, +-5% tolerance. Nominal zener voltage Vz = 190.0V. Zener test current Izt = 66mA. |
NTE Electronics |
3709 |
NTF2955 |
Power MOSFET -60 V, 2.4 A, Single P-Channel SOT-223 |
ON Semiconductor |
3710 |
NTF2955T1 |
Power MOSFET -60 V, 2.4 A, Single P-Channel SOT-223 |
ON Semiconductor |
3711 |
NTF2955T1G |
Power MOSFET -60 V, 2.4 A, Single P-Channel SOT-223 |
ON Semiconductor |
3712 |
NTF2955T3 |
Power MOSFET |
ON Semiconductor |
3713 |
NTP2955 |
Power MOSFET -60 V, -12 A, Single P-Channel, TO-220AB |
ON Semiconductor |
3714 |
NX8560LJ295-BC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1529.55 nm. Frequency 196.00 THz. FC-UPC connector. |
NEC |
3715 |
NX8560LJ295-CC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1529.55 nm. Frequency 196.00 THz. SC-UPC connector. |
NEC |
3716 |
NX8560SJ295-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1529.553 nm. Frequency 196.00 THz. FC-UPC connector. |
NEC |
3717 |
NX8560SJ295-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1529.553 nm. Frequency 196.00 THz. SC-UPC connector. |
NEC |
3718 |
NX8562LB295-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1529.55 nm. Frequency 196.00 THz. Anode ground. FC-PC connector. |
NEC |
3719 |
NX8562LF295-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1529.55 nm. Frequency 196.00 THz. Anode floating. FC-PC connector. |
NEC |
3720 |
NX8563LB295-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1529.55 nm. Frequency 196.00 THz. FC-PC connector. Anode ground. |
NEC |
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