| No. |
Part Name |
Description |
Manufacturer |
| 3691 |
2SA1811 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE LOW FREQUENCY AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS |
TOSHIBA |
| 3692 |
2SA1897 |
20 V, 5 A, PNP ultra-low saturation voltage transistor |
NEC |
| 3693 |
2SA1947 |
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 3694 |
2SA1989 |
For Low Frequency Amplify Application Silicon PNP Epitaxial Type Uitra Super Nini |
Isahaya Electronics Corporation |
| 3695 |
2SA1993 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE MICRO |
Isahaya Electronics Corporation |
| 3696 |
2SA2012 |
Bipolar Transistor, -30V, -5A, Low VCE(sat) PNP Single PCP |
ON Semiconductor |
| 3697 |
2SA2018TL |
PNP Low VCE(sat) Transistor |
ROHM |
| 3698 |
2SA2030T2L |
PNP Low VCE(sat) Transistor |
ROHM |
| 3699 |
2SA2119K |
Low frequency transistor |
ROHM |
| 3700 |
2SA2119KT146 |
PNP Low VCE(sat) Transistor |
ROHM |
| 3701 |
2SA2154CT |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 3702 |
2SA2154MFV |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 3703 |
2SA2195 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 3704 |
2SA2214 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 3705 |
2SA2215 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 3706 |
2SA473 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 3707 |
2SA493-GR |
PNP transistor for low noise audio amplifier applications |
TOSHIBA |
| 3708 |
2SA493-Y |
PNP transistor for low noise audio amplifier applications |
TOSHIBA |
| 3709 |
2SA493G |
Silicon PNP epitaxial planar transistor for Low Noise Audio Amplifier Applications |
TOSHIBA |
| 3710 |
2SA494 |
Silicon PNP epitaxial planar transistor for Low Noise Audio Amplifier Applications |
TOSHIBA |
| 3711 |
2SA539 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW. |
USHA India LTD |
| 3712 |
2SA542 |
Low frequency amplifier. Collector-base voltage: Vcbo = -30V. Collector-emitter voltage: Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW. |
USHA India LTD |
| 3713 |
2SA562TM |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 3714 |
2SA564 |
Low Level and General Purpose Amplifiers |
Micro Electronics |
| 3715 |
2SA634 |
PNP silicon transistor for audio frequency and low speed switching applications |
NEC |
| 3716 |
2SA640 |
PNP silicon transistor designed for use in AF low noise amplifier of STEREOSET, RADIO and TAPE RECORDER |
NEC |
| 3717 |
2SA642 |
LOW FREQUENCY POWER AMPLIFIER |
USHA India LTD |
| 3718 |
2SA643 |
Transistors LOW FREQUENCY POWER AMPLIFIER |
USHA India LTD |
| 3719 |
2SA671 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 3720 |
2SA673AB |
PNP transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
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